Results 31 to 40 of about 138,401 (319)

Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

open access: yes, 2005
Electron paramagnetic resonance (EPR) was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only Pb0 and Pb1 centres, which ...
Jones, Benjamin   +7 more
core   +1 more source

Al2O3-based binders for corrosion resistance optimization of Al2O3–MgAl2O4 and Al2O3–MgO refractory castables

open access: yesCeramics International, 2015
Abstract This work addresses the main aspects related to the use of alternative binders [hydratable (HA) or colloidal alumina (ColAlu)] in castables containing different spinel sources (pre-formed or in situ generated), in order to point out: (i) the features that control the corrosion behavior of these materials, and (ii) the key factors to better
Tomba Martinez, Analia Gladys   +3 more
openaire   +2 more sources

Síntesis y caracterización estructural del compuesto de refuerzo de Ti+Ni3Al+Al2O3 a base de Fe producido por aleación mecánica

open access: yesRevista de Metalurgia, 2020
La mezcla de polvo de Ti+Ni3Al+Al2O3 a base de Fe se alea mecánicamente en un molino de bolas Spex. Los compuestos con adición de Ti+Ni3Al+Al2O3 a base de Fe se produjeron a una temperatura de sinterización de 1000 °C durante un tiempo de 1 h.
Tanju Teker, S. Osman Yilmaz
doaj   +1 more source

SO2 Reactions over γ-Al2O3,Pt/γ-Al2O3,Sn/γ-Al2O3 and Pt–Sn/γ-Al2O3

open access: yesCatalysis Communications, 2001
Abstract Platinum and Platinum–tin bimetallic catalysts supported on alumina were prepared by co-impregnation of both metallic precursors on the support and used as catalysts for the oxidation of SO 2 . Platinum dispersion was determined by means of H 2 –O 2 titration.
Griselda Corro   +2 more
openaire   +1 more source

Characterization of Aluminized Layers on Inconel‐738 Alloy: Microstructure, Modeling of Aluminizing Kinetics, and Thermal Behavior

open access: yesAdvanced Engineering Materials, EarlyView.
This study explored how effective nickel aluminide coatings are obtained in providing oxidation resistance applied to the Inconel 738 alloy, modeling with diffusion models. In the present study, kinetics and thermal behavior of the Inconel 738 alloy were studied by the low‐temperature thermoreactive aluminizing process, which was carried out at 625°C ...
Gozde Celebi Efe   +4 more
wiley   +1 more source

Solubility of Al2O3 in the Na2O-Al2O3-H2O-CH3OH System at (30 and 60) degrees C

open access: yes, 2010
To realize the objective of high alumina yield and a high molar Na2O/Al2O3 ratio in caustic solutions for Bayer plants, this paper presents the solubility of Al2O3 in methanol-water solvent mixtures with a fixed mass ratio of methanol to water 1:1 at (30
Zhang, Ying   +5 more
core   +1 more source

Combined Process‐ and Phase‐Field‐Simulation to Predict the Microstructure of Single‐Crystal Ni‐Based Superalloys

open access: yesAdvanced Engineering Materials, EarlyView.
A combined finite element and phase‐field approach predicts the evolution of microstructure during the directional solidification of Ni‐based superalloys. The model reveals how withdrawal rate, temperature gradient, and wall thickness control the dendrite spacing, highlighting the strong effect of surface regions in thin sections where dendrite growth ...
Sean Böhm   +3 more
wiley   +1 more source

Corrigendum to: Enhanced Long-term Stability and Carbon Resistance of Ni/MnxOy-Al2O3 Catalyst in Near-equilibrium CO2 Reforming of Methane for Syngas Production [15(2), 2020, 331-347]

open access: yesBulletin of Chemical Reaction Engineering & Catalysis, 2020
According to Authors request (10th December 2020), Corrigendum to: Djebarri, B., Touahra, F., Aider, N., Bali, F., Sehailia, M., Chebout, R., Bachari, K., Halliche, D. (2020).
Baya Djebarri   +7 more
doaj   +1 more source

High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

open access: yesFunctional Diamond, 2023
The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen   +8 more
doaj   +1 more source

The effect of precursor composition and sintering additives on the formation of ß-sialon from Al, Si and Al2O3 powders

open access: yes, 2011
A study was performed to investigate the effect of increasing the Al or Al2O3 precursor content, above the stoichiometric amount, on the formation of β-sialon by pressureless sintering of Al, Si and Al2O3 powders in flowing nitrogen gas.
Ewing, Helen, Yang, S.
core   +1 more source

Home - About - Disclaimer - Privacy