Results 101 to 110 of about 34,905 (216)

Generative AI‐Enabled Discovery and Experimental Demonstration of Ultra‐Broadband Epsilon‐Near‐Zero Perfect Absorbers

Advanced Science, EarlyView.
Researchers developed and applied a generative artificial intelligence (AI) model to optimize epsilon‐near‐zero thin film stacks for ultra‐broadband perfect absorption of light. The fabricated AI‐designed absorber, with a total thickness of only 160 nm, experimentally demonstrated an absorption bandwidth exceeding 1000 nm while maintaining greater than
David Dang, Meena Salib, Quynh Dang, Sudip Gurung, Juan Calixto, Xuguo Zhou, Stuart Love, Massee Akbar, Aleksei Anopchenko, Wilton J.M. Kort‐Kamp, Ho Wai Howard Lee   +10 more
wiley   +1 more source

Defect‐Symmetry Engineered Gyroidal Photonic Crystals Achieve Monotonic Modulation of Bandgap Width With a Stable Mid‐Gap

Advanced Science, EarlyView.
Inspired by the twin grain boundary discovered in natural gyroidal networks, a series of gyroid‐derived photonic crystals are constructed based on defect‐symmetry engineering. The new series of structures enables monotonic tuning of the width of the photonic bandgap (PBG) while the central frequency of the PBG maintains stable.
Shuo Huang, Yang Zhou, Wenxin Ning, Hengliang Wang, Lu Han, Xueyan Feng   +5 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Effect of Plasma Excitation Mode on Rutile TiO₂ MIM Capacitors Grown on RuO₂ Seed Electrodes. [PDF]

Nanomaterials (Basel)
Jang Y, Kim B, Nam H, Kang M, Hong C, Yoon C.   +5 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Letter to the Editor from Erdoğan Özbuğday and Karakurt: "Primary adrenal insufficiency resulting in diagnosis of rare <i>ABCD1</i> pathogenic variant in X-linked adrenoleukodystrophy". [PDF]

JCEM Case Rep
Erdoğan Özbuğday H, Karakurt F.
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Exercise as a Multisystem Adjunct for Alcohol-Associated Liver Disease: Inflammatory Mechanisms, Muscle-Liver Crosstalk, and Translational Gaps. [PDF]

Metabolites
Xu J, Sang K, Zhang J.
europepmc   +1 more source