Results 161 to 170 of about 205,446 (284)

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

open access: yesAdvanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush   +9 more
wiley   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Nanoionics Drastically Accelerating Mass Transfer at Elevated Temperatures over 750 °C. [PDF]

open access: yesACS Nano
Chen Y   +4 more
europepmc   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy   +2 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre‐Reduction Agent

open access: yesAdvanced Electronic Materials, EarlyView.
This study investigates MoO2 thin films deposited by ALD as electrode materials for next‐generation DRAM capacitors. A pre‐reduction step using ethanol is introduced to control the oxidation state of MoOx and to suppress surface morphology degradation.
Soo Min Yoo   +3 more
wiley   +1 more source

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