Results 171 to 180 of about 205,446 (284)

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li   +6 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

open access: yesAdvanced Electronic Materials, EarlyView.
This article presents a comprehensive co‐doping toolkit to optimize the performance and reliability of fluorite‐structure ferroelectrics like hafnium oxide. By employing homogeneous and heterogeneous co‐doping strategies, precise control over crystallization behavior, polarization hysteresis, and oxygen vacancy distribution is achieved.
Shouzhuo Yang   +10 more
wiley   +1 more source

Reduced Lattice Thermal Conductivity in Thermoelectric α-MgAgSb via Sb<sub>2</sub>Te<sub>3</sub> Powder Atomic Layer Deposition. [PDF]

open access: yesACS Appl Mater Interfaces
García Santamaría I   +9 more
europepmc   +1 more source

Wafer‐Scale Bi2O2Se‐on‐Insulator Thin Films for Integrated Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
Wafer‐scale, thickness‐controlled semiconducting Bi2O2Se thin films were grown on 2‐inch insulating sapphire substrates via magnetron sputtering using quasi‐van der Waals epitaxy. The uniform films enable large‐scale fabrication of top‐gated TFT arrays with stable enhancement‐mode operation and functional inverter, NAND, and NOR logic gates.
Xi Chen   +4 more
wiley   +1 more source

Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
The work demonstrates La doping in In2O3 via ALD super‐cycles. The strong La─O bond suppresses oxygen vacancies, resulting in a decrease in mobility and a positive shift in threshold voltage. The effective suppression of VO decreases oxygen‐related defects under gate bias, leading to exceptional negative bias stability.
Jinxiu Zhao   +6 more
wiley   +1 more source

Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma   +11 more
wiley   +1 more source

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