Results 41 to 50 of about 34,905 (216)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park   +12 more
wiley   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam   +18 more
wiley   +1 more source

Advances in Solution‐Processed Textile Triboelectric Nanogenerators: Ink Formation, Processing Strategies, Applications, and Challenges

open access: yesAdvanced Functional Materials, EarlyView.
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley   +1 more source

Effect of Substrate Temperature on the Morphology and Crystallinity of TiO₂ Thin Films Grown by ALD Using TTIP and H₂O

open access: yesEast European Journal of Physics
This study investigates the influence of substrate temperature on the morphological and structural characteristics of TiO2 thin films synthesized by thermal ALD using titanium tetraisopropoxide and water as precursors.
Temur K. Turdaliev   +3 more
doaj   +1 more source

Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays

open access: yesAdvanced Functional Materials, EarlyView.
A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son   +2 more
wiley   +1 more source

Diagnostic imaging and biochemical findings of rare inherited X-linked adrenoleukodystrophy in a child [PDF]

open access: yesSrpski Arhiv za Celokupno Lekarstvo, 2017
Introduction. Adrenoleukodystrophy (ALD) is a rare genetic disease, caused by mutations in ABCD1 gene located on the X chromosome (X-ALD), underdiagnosed worldwide. Case Outline.
Serapinas Danielius   +6 more
doaj   +1 more source

Particle‐Level ZrO2 Atomic Layer Deposition Enables Fast‐Cycling and Long‐Life Graphite Cathodes for Dual‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A spatial location of atomic layer deposition (ALD)‐derived ZrO2 coatings is demonstrated to be a critical design parameter for stabilizing graphite cathodes in DIBs. Direct particle‐level ALD (PALD) screening of representative metal oxides identified ZrO2 as the coating that provides the most favorable balance of high‐rate capability and interfacial ...
Jieun Kang   +7 more
wiley   +1 more source

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