Results 71 to 80 of about 38,954 (267)
Advanced Science, EarlyView.A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji +18 more
wiley +1 more source
Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys
Advanced Science, EarlyView.This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin +11 more
wiley +1 more source
Témoignage de guerre. Le lieutenant ZIOUAL Allaoua, un officier de la lignée du colonel Amirouche
Revue d'Histoire Méditerranéenne, 2020 Zioual Allaoua est né en 1920 par jugement à Djaafra, dans la région de Bordj Bou Arreridj. Engagé au sein de l’ALN en juin 1955, il est doté de plusieurs qualités (courage, intelligence, autorité) qui l’ont certainement aidé à gagner la confiance de ses
ATTOUMI Djoudi
doaj
Microstructure, adhesion strength and thermal conductivity of AlN/(Ti, W)/Cu substrate system
Materials Research Express, 2020 AlN/(Ti, W)/Cu substrates were successfully fabricated by the combination of magnetron sputtering and electroless copper plating, exhibited layered distribution without obvious defects or delamination.
Yingfei Lin +3 more
doaj +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
Advanced Electronic Materials, EarlyView.The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Prototypes of Highly Effective Stress Balancing AlN Interlayers in MOVPE GaN-on-Si (111)
InorganicsThe GaN-on-Si virtual substrate is now an indispensable platform for the application of GaN in the fields of power devices, radio frequency, light-emitting devices, etc. Such applications are still in need of more effective stress balancing techniques to
Cai Liu +4 more
doaj +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, EarlyView.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source