Results 61 to 70 of about 166,038 (326)

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

open access: yes, 2004
We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and ...
Dilley, N. R.   +8 more
core   +1 more source

Nanolayer‐Encapsulated Stretchable Liquid‐Metal Sheets for Thermal Management

open access: yesAdvanced Functional Materials, EarlyView.
A stretchable liquid metal sheet with both high thermal conductivity and mechanical flexibility is developed. Its trilayer structure, comprising copper‐particle‐dispersed gallium liquid metal encapsulated by styrene‐butadiene‐styrene nanosheets, shows 40.4 W m−1 K−1 conductivity, elongation exceeding 200%, and retention of 96% of its initial ...
Daisuke Kuse   +16 more
wiley   +1 more source

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

open access: yesCumhuriyet Science Journal, 2018
In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
doaj   +1 more source

Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots [PDF]

open access: yes, 2004
We study the multi-exciton optical spectrum of vertically coupled GaN/AlN quantum dots with a realistic three-dimensional direct-diagonalization approach for the description of few-particle Coulomb-correlated states. We present a detailed analysis of the
D. Bimberg   +7 more
core   +2 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Record Energy Storage Performance Metrics in Ferroelectric Hafnia‐Based Films through Heterostructure Design

open access: yesAdvanced Functional Materials, EarlyView.
Dielectric capacitors typically struggle to achieve both high energy storage density and high efficiency at applied voltages below 10 V. Here, we address this challenge by introducing a novel hybrid fluorite/perovskite heterostructure design that combines ultra‐high recoverable energy storage density with efficient energy release (Uf ≈ 1016 J/cm3), at ...
Ampattu R. Jayakrishnan   +10 more
wiley   +1 more source

Generation of stable and breathing flat-top solitons via Raman assisted four wave mixing in microresonators [PDF]

open access: yes, 2020
Flat-top-soliton (or platicon) dynamics in coherently pumped normal dispersion microresonators is important for both fundamental nonlinear physics and microcomb generation in the visible band.
Bao, Chengying   +3 more
core  

Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics

open access: yes, 2012
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range where low ...
Fong, King Y.   +5 more
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy