Results 71 to 80 of about 166,038 (326)
Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlGaN/AlN/GaN heterostructures [PDF]
, 2006 We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-de ...
H. Morkoç +6 more
core +3 more sources
Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
AIP Advances, 2022 N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful ...
Jashan Singhal +8 more
openaire +3 more sources
Advanced Materials, EarlyView.This study demonstrates a self‐assembly process to generate free‐standing piezoelectric nanomembranes, forming ultracompact microtubular acoustic wave sensors and actuators. The miniaturized 3D piezoelectric platform reported in this work can be applied in telecommunication, energy harvesting, and acoustofluidics. Moreover, the 3D self‐assembly can add
Raphaël C. L‐M. Doineau +9 more
wiley +1 more source
Hot phonon effects on high field transport in GaN & AlN [PDF]
, 2015 We have studied the effects of hot phonons on the high-field transport in GaN & AlN. The dynamics of the non-equilibrium electron-LO phonon system is studied via an ensemble Monte-Carlo code.
Dyson, Angela +2 more
core +1 more source
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
MRS Internet Journal of Nitride Semiconductor Research, 2004 AlN single crystals were grown on AlN/SiC seeds by sublimation of AlN powder in TaC crucibles in a nitrogen atmosphere. The seeds were produced by metallorganic chemical vapor deposition (MOCVD) of AlN on SiC crystals. The influence of growth temperature, growth time and source-to-seed distance on the crystallinity and the crystal growth rate were ...
Noveski, V. +4 more
openaire +4 more sources
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures [PDF]
Journal of Applied Physics, 2009 This work describes Shubnikov–de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a
Lisesivdin, S. B. +8 more
openaire +6 more sources
Advanced Materials, EarlyView.Precursor carbon stoichiometry programs internal strain and oxygen substitution in Ti3AlCxO2‐x, deterministically switching Ti3CxO2‐xTz MXenes between highly aligned 2D nanosheets and spontaneous 1D nanoscrolls. This synthesis‐stage architecture control enables ultrathin X/W‐band EMI shielding with outstanding mass‐normalized performance and bending ...
Jaeeun Park +12 more
wiley +1 more source
Pharmaceutics, 2017 To improve the transdermal bioavailability and safety of alendronate (ALN), a nitrogen-containing bisphosphonate, we developed self-dissolving microneedle arrays (MNs), in which ALN is loaded only at the tip portion of micron-scale needles by a dip ...
Hidemasa Katsumi +7 more
doaj +1 more source
Molecular Design of Bisphosphonate-Modified Proteins for Efficient Bone Targeting In Vivo. [PDF]
PLoS ONE, 2015 To establish a rational molecular design for bisphosphonate (BP)-modified proteins for efficient bone targeting, a pharmacokinetic study was performed using a series of alendronate (ALN), a nitrogen-containing BP, modified proteins with various molecular
Hidemasa Katsumi +5 more
doaj +1 more source
GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]
, 2016 This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla +4 more
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