Results 71 to 80 of about 20,548 (216)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Nanomaterials, 2019
High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-
Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, Shengjun Zhou   +5 more
doaj   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Machine Learning‐Assisted Design and Performance Prediction of a Compact Dual‐Band Polarization‐Insensitive THz Metamaterial Absorber for Skin‐Cancer‐Related Refractive‐Index Sensing

Advanced Electronic Materials, EarlyView.
A compact QASRR‐based THz metamaterial absorber enables polarization‐insensitive dual‐band absorption and skin‐cancer‐related refractive‐index sensing through measurable resonance shifts. Field, surface‐current, and circuit analyses clarify the dual‐resonance mechanism, while StackNet‐assisted prediction accurately estimates the simulated absorption ...
Md. Murad Kabir Nipun, S. M. Rifatur Rana, Md. Golam Morshed, Imrose Jahan, F. A. Sabbir Ahamed, Md. Jahedul Islam   +5 more
wiley   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Coarsening‐Resistant Ag Sinter Composites: Mechanistic Insights From Different Ag–Additive Systems

Advanced Electronic Materials, EarlyView.
An Ag–WC sintered composite exhibiting superior resistance to thermal coarsening. Different particle‐reinforced Ag sinter composites showed markedly different microstructural responses to thermal aging. The comparison revealed that robust Ag–additive interfaces maintain grain‐boundary pinning, whereas insufficient interfacial stability results in the ...
Yang Liu, Chuantong Chen, Ran Liu, Akitsu Shigetou, Katsuaki Suganuma   +4 more
wiley   +1 more source

Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering

Advanced Electronic Materials, EarlyView.
Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang, Zhiming Shi, Zi‐Hui Zhang, Su‐Huai Wei, Xiaojuan Sun, Dabing Li   +5 more
wiley   +1 more source

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

Advanced Electronic Materials, EarlyView.
Aluminum nitride (AlN) is a biocompatible piezoelectric material suitable for energy harvesting in MEMS resonators. Through rapid thermal annealing, a threshold for CMOS‐compatible processes is established. AlN improved its crystallinity and enhanced the piezoelectric coefficient by ∼160%. Devices show an improvement in the electromechanical properties
Laura Mazón‐Maldonado, Lucía Nieto Sierra, M. Pilar Villar Castro, Fernando Lloret‐Vieira, Isidoro Ruíz‐García, Des Gibson, Hadi Heidari, Carlos García Núñez   +7 more
wiley   +1 more source

Nasal soft‐tissue anatomy of Triceratops and other horned dinosaurs

The Anatomical Record, EarlyView.
Abstract Although ceratopsid dinosaurs possess a characteristically hypertrophied narial region, soft‐tissue anatomy associated with such a skeletal structure and their biological significance remain poorly understood. The present study provides the first comprehensive hypothesis on the soft‐tissue anatomy in the ceratopsid rostrum based on the Extant ...
Seishiro Tada, Takanobu Tsuihiji, Hiroki Ishikawa, Noriyuki Wakimizu, Soichiro Kawabe, Kodai Sakane   +5 more
wiley   +1 more source

Témoignage de guerre Souvenirs d’une rescapée des maquis de la wilaya III

Revue d'Histoire Méditerranéenne
Je suis une ancienne maquisarde de l’ALN. En 1957, je me suis engagée dans Révolution algérienne en compagnie de Slamani Malika et Belaid L’Djidda. Nous sommes partis de Béjaia pour rejoindre le village d’Ighil Ouyazit, non loin d’El Merdj Ouamane.
Zina MEBARKI dite N’Djima
doaj