Results 41 to 50 of about 41,670 (314)

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

APL Materials, 2022
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has garnered much attention recently as a promising channel material for next-generation high electron mobility transistors (HEMTs). A comprehensive experimental study of the effects of Al composition x on the transport and structural properties is lacking.
Jashan Singhal, Reet Chaudhuri, Austin Hickman, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena   +5 more
openaire   +2 more sources

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

PULSED LASER DEPOSITION OF ALUMINUM NITRIDE THIN FILMS ONTO SAPPHIRE SUBSTRATES [PDF]

Научно-технический вестник информационных технологий, механики и оптики, 2020
Subject of Research.The paper presents experimental study results of surface morphology and structural and optical properties of sapphire AlN films obtained by pulsed laser spraying. Method.
Oleg V. Devitsky, Dmitry A. Nikulin, Igor A. Sysoev   +2 more
doaj   +1 more source

Структура и электрофизические свойства нанокристаллических слоев AlN на кремнии, выращенных методом реактивного магнетронного распыления [PDF]

, 2017
В работе исследовались пленки AlN на n-Si (100) подложке, напыленные методом реактивного магнетронного распыления на переменном токе. Была установлена корреляция между структурой и электрофизическими свойствами, в зависимости от толщины напыленных плёнок.
Pilipenko Nelli, Пилипенко Нелли Витальевна   +1 more
core  

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

, 2014
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions.
Xiao Zhou, Yang, SY, Shao Yang, Zhou, XW, Hao, Y, Hao, Yue, Zhu, Qin Sheng, Jiao, Chun Mei, Liu, SM, Zhan Wang, Zhu, QS, Jiao, CM, Yang, Shao Yan, Hui Li, Li, Hui Jie, Liu, GP, Qin Zhu, Bo Shen, Li, HJ, Hong Wei, Shu Liu, Mao, W, Liu, Gui Peng, Gui Liu, Sang, Ling, Shen, B, Liu, Shu Man, Yue Hao, Wei, Hong Yuan, Mao, Wei, Wei, HY, Wang, ZG, Wang, Zhan Guo, Ling Sang, Zhou, Xiao Wei, Chun Jiao, Wei Mao, Sang, L, Shen, Bo   +38 more
core   +1 more source

Unlocking Exceptional Strengthening in Aluminum Alloys via Interstitial Cottrell Atmosphere Formation

Advanced Functional Materials, EarlyView.
Cyclic unloading‐aging‐reloading micro‐tensile tests under various aging durations and temperatures, combined with comprehensive microstructural characterization reveal that the yield point phenomenon in Aluminum‐Carbon (Al‐C) thin films originates from Cottrell atmosphere formation.
Zion Lee, Hojang Kim, Yixuan Hu, Injong Oh, Tae‐Hyeok Kang, Hyeonbeen Noh, Yuhyun Park, Sunkun Choi, Pyuck‐Pa Choi, Kolan Madhav Reddy, Gi‐Dong Sim   +10 more
wiley   +1 more source

sj-docx-1-aln-10.1177_11771801231171234 – Supplemental material for How to do research with Native communities: lessons from students’ experiences and Elders’ wisdom

, 2023
Supplemental material, sj-docx-1-aln-10.1177_11771801231171234 for How to do research with Native communities: lessons from students’ experiences and Elders’ wisdom by Nusroon Fatiha, Tai Mendenhall and Jerica M Berge in AlterNative: An International ...
Tai Mendenhall (15317006), Nusroon Fatiha (15432045), Jerica M Berge (15432048)   +2 more
core   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Témoignage de guerre : Démocratie, discipline révolutionnaire et grève des 8 jours.

Revue d'Histoire Méditerranéenne, 2023
Quelques jours avant l’ouverture du débat à l’O.N.U. sur la question algérienne, le CCE décide de lancer une grève de 8 jours sur le territoire algérien. Cette action vient au moment où la Révolution traverse « une phase de grande exaltation ».
ZERARI Rabah dit commandant AZZEDINE
doaj  

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

MRS Internet Journal of Nitride Semiconductor Research, 2004
AlN single crystals were grown on AlN/SiC seeds by sublimation of AlN powder in TaC crucibles in a nitrogen atmosphere. The seeds were produced by metallorganic chemical vapor deposition (MOCVD) of AlN on SiC crystals. The influence of growth temperature, growth time and source-to-seed distance on the crystallinity and the crystal growth rate were ...
Noveski, V., Schlesser, R., Mahajan, S., Beaudoin, Stephen P., Sitar, Z.   +4 more
openaire   +3 more sources