Carbon nanotube forests as top electrode in electroacoustic resonators [PDF]
, 2015 We grow carbon nanotube forests on piezoelectric AlN films and fabricate and characterize nanotube-based solidly mounted bulk acoustic wave resonators employing the forests as the top electrode material. The devices show values for quality factor at anti-
Bhardwaj, Sunil +12 more
core +3 more sources
Effect of Cooling Rate on AlN Precipitation in FeCrAl Stainless Steel During Solidification
Metals, 2019 The effect of cooling rate on the evolution of AlN inclusions precipitated during solidification in FeCrAl stainless steel was investigated using an experimental study and thermodynamic and kinetic calculations.
Zhenqiang Deng +5 more
doaj +1 more source
Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure [PDF]
, 2004 First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus
A. J. Freeman +6 more
core +3 more sources
CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth
Crystals, 2022 (111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated.
Marc Portail +10 more
doaj +1 more source
Offsets and polarization at strained AlN/GaN polar interfaces
, 1996 The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface.
Bernardini, Fabio +2 more
core +2 more sources
Very high-current-density Nb/AlN/Nb tunnel junctions for low-noise submillimeter mixers [PDF]
, 2000 We have fabricated and tested submillimeter-wave superconductor–insulator–superconductor (SIS) mixers using very high-current-density Nb/AlN/Nb tunnel junctions (Jc[approximate]30 kA cm–2). The junctions have low-resistance-area products (RNA[approximate]
Bumble, Bruce +6 more
core +1 more source
Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure [PDF]
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020 Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work we present the fabrication and DC / high voltage characterizations of AlN/AlGaN/AlN double heterostructure that are regrown by ...
Abid, Idriss +8 more
openaire +2 more sources
Nanomaterials, 2019 High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-
Jie Zhao +5 more
doaj +1 more source
Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD
Crystals, 2023 Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu +4 more
doaj +1 more source
Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
, 2019 An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport.
Dong, Dan +11 more
core +1 more source