Results 21 to 30 of about 166,038 (326)
MORPHOLOGY AND OPTICAL PROPERTIES OF AlN FILMS ON SAPPHIRE [PDF]
Научно-технический вестник информационных технологий, механики и оптики, 2019 Subject of Research. The paper presents the results of an experimental study on morphology and optical properties of AlN films on sapphire. Thin AlN films on sapphire were used as experimental samples. Method. To obtain thin films, an ion beam deposition
Oleg V. Devitsky +3 more
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PULSED LASER DEPOSITION OF ALUMINUM NITRIDE THIN FILMS ONTO SAPPHIRE SUBSTRATES [PDF]
Научно-технический вестник информационных технологий, механики и оптики, 2020 Subject of Research.The paper presents experimental study results of surface morphology and structural and optical properties of sapphire AlN films obtained by pulsed laser spraying. Method.
Oleg V. Devitsky +2 more
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First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [PDF]
, 2006 First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. Cluster expansion Hamiltonians that excluded, and included, excess vibrational contributions to the free energy, Fvib,
Burton, B. P. +2 more
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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects
Micromachines, 2020 In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic
Songrui Zhao +3 more
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3D FEM Analysis of High-Frequency AlN-Based PMUT Arrays on Cavity SOI
Sensors, 2019 This paper presents three-dimensional (3D) models of high-frequency piezoelectric micromachined ultrasonic transducers (PMUTs) based on the finite element method (FEM).
Wenjuan Liu +11 more
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Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy [PDF]
, 2007 The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN
Jefferson, Paul Harvey +7 more
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Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy [PDF]
, 2008 The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20
Bailey, L. R. (Laura R.) +9 more
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Témoignage de guerre : Démocratie, discipline révolutionnaire et grève des 8 jours.
Revue d'Histoire Méditerranéenne, 2023 Quelques jours avant l’ouverture du débat à l’O.N.U. sur la question algérienne, le CCE décide de lancer une grève de 8 jours sur le territoire algérien. Cette action vient au moment où la Révolution traverse « une phase de grande exaltation ».
ZERARI Rabah dit commandant AZZEDINE
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Nihon Kikai Gakkai ronbunshu, 2016 In our previous study, it was found that the wear life of the DLC/AlN hybrid film compared with a DLC film deposited directly onto Al-alloy could be improved by controlling the hardness of the AlN intermediate layer film.
Masashi NAKAMURA, Yuki TAKAMORI
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Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2020 A study of the Al2O3 and AlN nanopowder formation under the influence of twin laser pulses with an energy of 52 mJ and between the pulse interval of 10 microseconds on an aluminum target placed in a closed glass rectangular box, depending on the number ...
Kh. Bazzal +5 more
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