Results 31 to 40 of about 166,038 (326)
In our previous study, it was found that the wear life of the DLC/AlN multilayer hybrid coating could be improved by approximately 80 times of that of a DLC film deposited directly onto an aluminum (Al)-alloy.
Masashi NAKAMURA, Tsutomu ISHII
doaj +1 more source
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters
In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition.
Imrich Gablech +8 more
doaj +1 more source
A theoretical insight into the structural evolution of AlN atomic clusters and the chemisorption of several common alloying elements on a large cluster has been performed in the framework of state-of-the-art density functional theory calculations.
Xi Nie +6 more
doaj +1 more source
The microchannel-form effect on the formation of AlO and AlN in the laser plasma has been studied when the surface of a target of D16 Т aluminum alloy was subjected to series of sequential focused double laser pulses in air.
K. Bazzal +3 more
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Local Electronic Structure in AlN Studied by Single-Crystal 27Al and 14N NMR and DFT Calculations
Both the chemical shift and quadrupole coupling tensors for 14 N and 27 Al in the wurtzite structure of aluminum nitride have been determined to high precision by single-crystal NMR spectroscopy. A homoepitaxially grown AlN single crystal
Otto E. O. Zeman +4 more
doaj +1 more source
Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties [PDF]
This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction ...
Chung, T. F. +7 more
core +3 more sources
Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN
Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc.
V. S. Feshchenko +4 more
doaj +1 more source
High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots [PDF]
We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy.
Boucaud, Philippe +11 more
core +5 more sources
Stability studies of ZnO and AlN thin film acoustic wave devices in acid and alkali harsh environments [PDF]
Surface acoustic wave (SAW) devices based on piezoelectric thin-films such as ZnO and AlN are widely used in sensing, microfluidics and lab-on-a-chip applications.
Duan, Huigao +9 more
core +2 more sources
Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has garnered much attention recently as a promising channel material for next-generation high electron mobility transistors (HEMTs). A comprehensive experimental study of the effects of Al composition x on the transport and structural properties is lacking.
Jashan Singhal +5 more
openaire +2 more sources

