Results 11 to 20 of about 166,038 (326)
Growth and optical properties of GaN/AlN quantum wells [PDF]
We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between
Adelmann, C. +9 more
core +4 more sources
Membraneless Piezoelectric MEMS speakers based on AlN Thin Film [PDF]
This paper reports piezoelectric aluminum nitride (AlN) based microelectromechanical systems (MEMS) speakers. We introduce a novel geometry of microspeakers based on AlN to meet the requirements of modern applications such as phones, tablets, laptops ...
Ahmed Fawzy
doaj +1 more source
Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin +13 more
doaj +1 more source
Research progress in mechanical properties of AlN reinforced aluminum matrix composites
The lightweight and high strength toughness of materials are of great significance for achieving energy-saving, environmental protection, and sustainable development strategies.
ZHAO Yongfeng +4 more
doaj +1 more source
This review covers studies dedicated to the search for and development of sorbents for the extraction of the caesium-137. The review analyses a new method for growing SiC epitaxial films on Si, which is based on the coordinated substitution ...
Sergey A. Kukushkin, Andrey V. Osipov
doaj +1 more source
بررسی خواص الکترونی و مکانیکی تک لایه AlN تحت جذب هیدروژن با استفاده از اصول اولیه [PDF]
در این مطالعه، خواص الکترونی و مکانیکی تک لایه AlN خالص و کاملاً هیدروژندار شده، با استفاده از محاسبات اصول اولیه، مورد مطالعه قرار گرفته است. دو حالت مختلف برای جذب هیدروژن در نظر گرفته شده است: (الف) جذب اتمهای هیدروژن روی اتمهای آلومنیوم و نیتروژن ...
راضیه نعمتی +2 more
doaj +1 more source
In this paper, mathematical modeling and simulation of a MEMS-based clamped square-shape membrane for capacitive pressure sensors have been performed. Three types of membrane materials were investigated (i.e.
Dagamseh Ahmad +5 more
doaj +1 more source
AlN-AlN Wafer Bonding and Its Thermal Characteristics [PDF]
Introduction Wafer bonding allows heterogeneous integration of two materials with similar or very different lattice parameters and thermal properties, via an intermediate bonding layer or direct contact.
Bao, Shunyu +4 more
openaire +2 more sources
AlN-AlN Layer Bonding and Its Thermal Characteristics [PDF]
Singapore. National Research Foundation (Singapore-MIT Alliance for Research and Technology)
Bao, S. +4 more
openaire +4 more sources
Growth and thermal stability of TiN/ZrAlN: Effect of internal interfaces [PDF]
Wear resistant hard films comprised of cubic transition metal nitride (c-TMN) and metastable c-AlN with coherent interfaces have a confined operating envelope governed by the limited thermal stability of metastable phases.
Aboulfadl, Hisham +9 more
core +2 more sources

