Results 11 to 20 of about 166,038 (326)

Growth and optical properties of GaN/AlN quantum wells [PDF]

open access: green, 2003
We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between
Adelmann, C.   +9 more
core   +4 more sources

Membraneless Piezoelectric MEMS speakers based on AlN Thin Film [PDF]

open access: yesJES: Journal of Engineering Sciences, 2022
This paper reports piezoelectric aluminum nitride (AlN) based microelectromechanical systems (MEMS) speakers. We introduce a novel geometry of microspeakers based on AlN to meet the requirements of modern applications such as phones, tablets, laptops ...
Ahmed Fawzy
doaj   +1 more source

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

open access: yesКонденсированные среды и межфазные границы, 2023
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin   +13 more
doaj   +1 more source

Research progress in mechanical properties of AlN reinforced aluminum matrix composites

open access: yesCailiao gongcheng, 2023
The lightweight and high strength toughness of materials are of great significance for achieving energy-saving, environmental protection, and sustainable development strategies.
ZHAO Yongfeng   +4 more
doaj   +1 more source

Thermodynamics, kinetics, and technology of synthesis of epitaxial layers of silicon carbide on silicon by coordinated substitution of atoms, and its unique properties. A review

open access: yesКонденсированные среды и межфазные границы, 2022
This review covers studies dedicated to the search for and development of sorbents for the extraction of the caesium-137. The review analyses a new method for growing SiC epitaxial films on Si, which is based on the coordinated substitution ...
Sergey A. Kukushkin, Andrey V. Osipov
doaj   +1 more source

بررسی خواص الکترونی و مکانیکی تک لایه AlN تحت جذب هیدروژن با استفاده از اصول اولیه [PDF]

open access: yesپژوهش سیستم‌های بس‌ذره‌ای, 2021
در این مطالعه، خواص الکترونی و مکانیکی تک لایه AlN خالص و کاملاً هیدروژن‌دار شده، با استفاده از محاسبات اصول اولیه، مورد مطالعه قرار گرفته است. دو حالت مختلف برای جذب هیدروژن در نظر گرفته شده است: (الف) جذب اتم‌های هیدروژن روی اتم‌های آلومنیوم و نیتروژن ...
راضیه نعمتی   +2 more
doaj   +1 more source

Modeling of a square-shape ZnO, ZnS and AlN membrane for mems capacitive pressure-sensor applications

open access: yesInternational Journal for Simulation and Multidisciplinary Design Optimization, 2020
In this paper, mathematical modeling and simulation of a MEMS-based clamped square-shape membrane for capacitive pressure sensors have been performed. Three types of membrane materials were investigated (i.e.
Dagamseh Ahmad   +5 more
doaj   +1 more source

AlN-AlN Wafer Bonding and Its Thermal Characteristics [PDF]

open access: yesECS Meeting Abstracts, 2014
Introduction Wafer bonding allows heterogeneous integration of two materials with similar or very different lattice parameters and thermal properties, via an intermediate bonding layer or direct contact.
Bao, Shunyu   +4 more
openaire   +2 more sources

AlN-AlN Layer Bonding and Its Thermal Characteristics [PDF]

open access: yesECS Journal of Solid State Science and Technology, 2015
Singapore. National Research Foundation (Singapore-MIT Alliance for Research and Technology)
Bao, S.   +4 more
openaire   +4 more sources

Growth and thermal stability of TiN/ZrAlN: Effect of internal interfaces [PDF]

open access: yes, 2016
Wear resistant hard films comprised of cubic transition metal nitride (c-TMN) and metastable c-AlN with coherent interfaces have a confined operating envelope governed by the limited thermal stability of metastable phases.
Aboulfadl, Hisham   +9 more
core   +2 more sources

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