Results 241 to 250 of about 1,937,757 (312)

Processing‐Induced Performance Limits of Platinum Resistance Temperature Detectors for Reliable Organ‐On‐A‐Chip Sensing

Advanced Materials Interfaces, EarlyView.
The thermal budget imposed during oxide passivation is revealed as a key design parameter for Pt resistance temperature detectors in Organ‐on‐a‐Chip platforms. By establishing a direct processing–microstructure–device performance relationship, this work transforms an unavoidable fabrication step into a strategy for reliable integrated temperature ...
Gabriel M. Ferreira, Paulo J. Sousa, Susana O. Catarino, Graça Minas, Patrícia C. Sousa   +4 more
wiley   +1 more source

Studies on Aluminum Compounds. VII

YAKUGAKU ZASSHI, 1957
openaire   +2 more sources

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Resveratrol as a potential natural compound to ameliorate cognitive impairment in aluminum-exposed mice: impacts on behavior, purinergic system, and brain inflammation. [PDF]

Metab Brain Dis
Visentini AE, Reichert KP, Schetinger MRC, Bottari NB, Miron VV, Castro MFV, da Silveira MV, Assmann CE, Schirmann AA, Morsch VMM.   +9 more
europepmc   +1 more source

Studies on Aluminum Compounds. III

YAKUGAKU ZASSHI, 1955
openaire   +2 more sources

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

Advanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu, Yiran Li, Tsung‐Han Tsai, Sudip Acharya, Yi Lu, Jie Zhou, Samuel A. Haessly, Shui‐Qing Yu, Nanditha M. Dissanayake, Edward K. Huang, Jiarui Gong, Zhenqiang Ma   +11 more
wiley   +1 more source

Bonding Strength of the CFRP and AA6061 Joint Using Ascorbic Acid and Sodium Chloride Surface Treatment. [PDF]

Materials (Basel)
Kang D, Kim J, Seong H, Yoon J, Jung S.
europepmc   +1 more source

Studies on Aluminum Compounds. X

YAKUGAKU ZASSHI, 1957
openaire   +2 more sources

Periodic Trends in Low-Valent Group 14 and Group 15 Compounds: Theoretical Photoelectron Spectroscopy of Tetrylenes, Tetrylones, and Singlet Pnictinidenes. [PDF]

ACS Omega
Conradie J, Torstensen K, Ghosh A.
europepmc   +1 more source

The All American way of canning and cooking with all-American pressure cookers of molded aluminum [PDF]

Wisconsin Aluminum Foundry Co., Inc.
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