Results 161 to 170 of about 2,968 (223)

A Universal Implementation Approach for Multivalued Logic Gates Based on Negative Transconductance in Series-Connected Two-Dimensional Transistors. [PDF]

ACS Nano
Zhao G, Wen W, Liao K, Coquet P, Wang X, Huang M, Tay BK.   +6 more
europepmc   +1 more source

Revealing the charge transport physics in metallic coordination nanosheets by thermoelectric and magnetotransport measurements. [PDF]

Sci Adv
Wu T, Ren X, Cornil D, Quarti C, Jacobs IE, Zhang L, Fukui N, Beljonne D, Nishihara H, Sirringhaus H.   +9 more
europepmc   +1 more source

Advances in Near-Infrared Organic Photodetectors: Molecular Design, Exciton Dynamics, and Device Integration. [PDF]

Polymers (Basel)
Lee H, Kim J.
europepmc   +1 more source

Low-frequency noise of MoTe₂ transistor: effects on ambipolar carrier transport and CYTOP doping. [PDF]

Discov Nano
Shin W, Lee DH, Ko R, Koo RH, Yoo H, Lee ST.   +5 more
europepmc   +1 more source

Tuning of Optoelectronic Properties in Oligo(phenyleneethynylene)-Based Cocrystals through Modulation of Charge-Transfer Interactions. [PDF]

ACS Omega
Kuttiyullathil S, Sudhakaran SV, Arputharaj DS, Hussien M, Thomas R.   +4 more
europepmc   +1 more source

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

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Small-molecule ambipolar transistors

Physical Chemistry Chemical Physics, 2022
Small-molecule materials showing ambipolar transistor properties are reviewed.
Toshiki Higashino, Takehiko Mori
openaire   +2 more sources

A Pedagogical Perspective on Ambipolar FETs

ChemPhysChem, 2013
AbstractThe operation of an ambipolar field‐effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor‐operation regimes and the resulting current–voltage relations can be easily ...
Moon Sung, Kang, C Daniel, Frisbie
openaire   +2 more sources

Ambipolar Field Effect Transistor

MRS Proceedings, 1985
AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.
Hans Pfleiderer, Wilhelm Kusian
openaire   +1 more source

Ambipolar diffusion in complex plasma

Physical Review E, 2007
A self-consistent model of the ambipolar diffusion of electrons and ions in complex (dusty) plasmas accounting for the local electric fields, the dust grain charging process, and the interaction of the plasma particles with the dust grains and neutrals is presented.
T V, Losseva, S I, Popel, M Y, Yu, J X, Ma   +3 more
openaire   +2 more sources