Results 171 to 180 of about 2,968 (223)
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Physics-Uspekhi, 2005
Experimental studies between 1978 and 2004 on ambipolar (tandem) mirror traps are reviewed. Results on the formation of ambipolar ion-confining barriers and the formation of thermal barriers for thermally insulating electrons in ion barriers from plasma confined in a solenoid are discussed.
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Experimental studies between 1978 and 2004 on ambipolar (tandem) mirror traps are reviewed. Results on the formation of ambipolar ion-confining barriers and the formation of thermal barriers for thermally insulating electrons in ion barriers from plasma confined in a solenoid are discussed.
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Ambipolar Diffusion in Semiconductors
American Journal of Physics, 1964Ter Haar has shown that simple kinetic theory arguments based on Drude's early work can be used to derive approximate expressions for the transport properties of semiconductors and metals. Using ter Haar's ideas, this paper derives an expression for the ambipolar diffusion contribution to the electron thermal conductivity.
F. E. Geiger, F. G. Cunningham
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Solid State Ionics, 1999
Abstract Oriented (100) single crystal of titanium dioxide (rutile) was equilibrated at an ambient oxygen partial pressure p (O 2 ) 10 −15 to 10 5 Pa, over the temperature range 900–1400 K. After the step change of p (O 2 ) to a new value, the equilibration kinetics was monitored by measuring electrical conductivity.
M Radecka, P Sobaś, M Rekas
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Abstract Oriented (100) single crystal of titanium dioxide (rutile) was equilibrated at an ambient oxygen partial pressure p (O 2 ) 10 −15 to 10 5 Pa, over the temperature range 900–1400 K. After the step change of p (O 2 ) to a new value, the equilibration kinetics was monitored by measuring electrical conductivity.
M Radecka, P Sobaś, M Rekas
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Applied Physics Letters, 2013
SnO is a promising oxide semiconductor that can be doped both p- and n-type, but the doping mechanisms remain poorly understood. Using hybrid functionals, we find that native defects cannot account for the unintentional p-type conductivity. Sn vacancies are shallow acceptors, but they have high formation energies and are unlikely to form. Unintentional
J. B. Varley +3 more
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SnO is a promising oxide semiconductor that can be doped both p- and n-type, but the doping mechanisms remain poorly understood. Using hybrid functionals, we find that native defects cannot account for the unintentional p-type conductivity. Sn vacancies are shallow acceptors, but they have high formation energies and are unlikely to form. Unintentional
J. B. Varley +3 more
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Ambipolar diffusion in RbAg4I5
Solid State Ionics, 1994Abstract The phenomena of silver dissolution into the RbAg4I5 are studied. The Raman scattering and luminescence with high spatial resolution are used as a tool for investigation of the process of excess silver diffusion and of saturation of RbAg4I5 by silver. The diffusion profile of excess silver was investigated.
S BREDIKHIN, T HATTORI, M ISHIGAME
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An ambipolar homojunction with options
Nature Electronics, 2020Circuits capable of reconfigurable logic and neuromorphic functions can be created by exploiting the electronic tunability of two-dimensional tungsten diselenide homojunctions.
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Ambipolar transistors based on azurin proteins
IEE Proceedings - Nanobiotechnology, 2004A new type of transistor is presented. It is realised by using a metalloprotein; namely, azurin. Thanks to their natural functional characteristics, which involve inter- and intramolecular electron transfer, metalloproteins are good candidates for biomolecular nanoelectronics. The implementation of a prototype of protein transistor operating in air and
D'AMICO, STEFANO +6 more
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The MHD properties of ambipolar diffusion and quasi—Ambipolar diffusion in a plasma column
Acta Mechanica Sinica, 1989In the present paper, based on the conservation law of mass and momentum for ion and electron, the distribution of velocity, density of ions and electrons along radial direction are solved numerically. Furthermore, the comparison between MHD properties of ambipolar and quasi-ambipolar diffusion is made.
Tang Fulin, Zhuo Kecong
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Linearization of the Equations for Ambipolar Diffusion
Proceedings of the Physical Society, 1962The radial electric field in the positive column, which is needed to promote ambipolar diffusion, is shown to be given to a good approximation by a second-order linear differential equation as the next stage beyond the Schottky approximation.
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European Journal of Physics, 1988
An asymptotic theory of ambipolar diffusion (AD) in slightly ionised bounded plasmas, based on utilisation of the small parameter in =rD2/L2(rD is the Debye length and L is a characteristic dimension of the system) and employing general assumptions about the geometry of the system and about the rates of elementary processes, is presented in an easily ...
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An asymptotic theory of ambipolar diffusion (AD) in slightly ionised bounded plasmas, based on utilisation of the small parameter in =rD2/L2(rD is the Debye length and L is a characteristic dimension of the system) and employing general assumptions about the geometry of the system and about the rates of elementary processes, is presented in an easily ...
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