Results 1 to 10 of about 7,142,378 (255)

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor [PDF]

Micromachines, 2019
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu, Sihyun Kim, Donghyun Ryu, Kitae Lee, Changha Kim, Jong-Ho Lee, Sangwan Kim, Byung-Gook Park   +7 more
doaj   +3 more sources

A hybrid approach for suppressing ambipolar current in short-channel TFETs based on zigzag antimonene nanoribbons [PDF]

Scientific Reports
In this paper, we report a tunnel field-effect transistor (TFET) based on a zigzag antimonene nanoribbon (ZSbNR) with a 12 nm channel length, simulated using density functional theory (DFT).
Amirreza Ghazi, Arash Yazdanpanah-Goharrizi   +1 more
doaj   +2 more sources

Silicon Material Based Tunnel FET for Controlling Ambipolar Current

Silicon, 2021
This paper highlights the reduction in ambipolar current by controlling various parameters for gate-drain overlapped structure of nanoscale TFET. In Conventional Tunnel Field Effect Transistor (TFET) the barrier width of tunneling at source-channel and channel-drain region is supervised by voltage at gate.
Shashi Bala, Harpal Singh, Priyanka Kamboj, Balwant Raj   +3 more
doaj   +4 more sources

MMS Observations of a Compressed Current Sheet: Importance of the Ambipolar Electric Field

Physical Review Letters, 2022
Spacecraft data reveals a nonuniform ambipolar electric field transverse to the magnetic field in a thin magnetotail current sheet that leads to intense ExB velocity shear and non-gyrotropic particle distributions. The ExB drift far exceeds the diamagnetic drift and drives lower hybrid waves localized to the magnetic field reversal region, which is ...
Ami M. DuBois, Chris Crabtree, Gurudas Ganguli, David M. Malaspina, William E. Amatucci   +4 more
openaire   +4 more sources

Ambipolar thin-film transistors and inverter circuits based on mixed-dimensional bilayer heterostructures [PDF]

Scientific Reports
Among a large number of layered materials family, molybdenum disulfide (MoS2) has been the most representative semiconducting channel material for electronic devices due to its exceptional electrical performance with a monolayer thickness. However, quite
Sujin Baek, Suhyeon Kim, Hye Young Lee, Haerim Kim, Jinhyeok Pyo, Sangyeon Pak, Bongjun Kim   +6 more
doaj   +2 more sources

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric [PDF]

Micromachines
An InGaAs/GaAsSb heterojunction dopingless Tunnel FET with a heterogate dielectric is proposed and investigated in this work, aiming to extend the advantages of dopingless TFETs in low-power applications.
JunJie Huang, HongXia Liu, Shupeng Chen, Shulong Wang, Chen Chong, Chang Liu   +5 more
doaj   +2 more sources

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design [PDF]

Scientific Reports
The performance of a Dual-Metal-InAs-GaSb Vertical Tunnel Field Effect Transistor (DM-InAs-GaSb VTFET) with an InAs source pocket was investigated in relation to the gate dielectric materials.
M. Saravanan, Eswaran Parthasarathy, Shiromani Balmukund Rahi, Ramkumar Natarajan   +3 more
doaj   +2 more sources

Current-density fluctuations and ambipolarity of transport [PDF]

Physical Review Letters, 1992
The fluctuation in the plasma current density is measured in the MIST reversed field pinch experiment. Such fluctuations, and the measured radial profile of the k spectrum of magnetic fluctuations, supports the view and that low frequency fluctuations (f ) demonstrates that radial particle transport from particle motion parallel to a fluctuating ...
, Shen, , Dexter, , Prager
openaire   +6 more sources

Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension [PDF]

Journal of Optoelectronical Nanostructures, 2023
:For the first time, in this research, we introduce ajunctionless tunneling FET (J-TFET) on a uniform p+starting junctionless FET to realize appreciable immunityagainst inherent high ambipolar current (Iamb).
Morteza Rahimian
doaj   +1 more source

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Nanoscale Research Letters, 2020
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen   +4 more
doaj   +1 more source