Results 1 to 10 of about 2,185 (161)

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor. [PDF]

Micromachines (Basel), 2019
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Yu J, Kim S, Ryu D, Lee K, Kim C, Lee JH, Kim S, Park BG.   +7 more
europepmc   +2 more sources

Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension [PDF]

Journal of Optoelectronical Nanostructures, 2023
Abstract:For the first time, in this research, we introduce ajunctionless tunneling FET (J-TFET) on a uniform p+starting junctionless FET to realize appreciable immunityagainst inherent high ambipolar current (Iamb). So, weutilize two isolated gates with appropriate workfunctionsover the channel and drain regions to create P+IP+N+charge distribution ...
Morteza Rahimian
openaire   +2 more sources

Ambipolar thin-film transistors and inverter circuits based on mixed-dimensional bilayer heterostructures. [PDF]

Sci Rep
Among a large number of layered materials family, molybdenum disulfide (MoS2) has been the most representative semiconducting channel material for electronic devices due to its exceptional electrical performance with a monolayer thickness. However, quite
Baek S, Kim S, Lee HY, Kim H, Pyo J, Pak S, Kim B.   +6 more
europepmc   +2 more sources

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
An InGaAs/GaAsSb heterojunction dopingless Tunnel FET with a heterogate dielectric is proposed and investigated in this work, aiming to extend the advantages of dopingless TFETs in low-power applications.
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +2 more sources

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
The performance of a Dual-Metal-InAs-GaSb Vertical Tunnel Field Effect Transistor (DM-InAs-GaSb VTFET) with an InAs source pocket was investigated in relation to the gate dielectric materials.
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +2 more sources

On-site biosignal amplification using a single high-spin conjugated polymer. [PDF]

Nat Commun
On-site or in-sensor biosignal transduction and amplification can offer several benefits such as improved signal quality, reduced redundant data transmission, and enhanced system integration.
Ge GY, Xu J, Wang X, Sun W, Yang M, Mei Z, Deng XY, Li P, Pan X, Li JT, Wang XQ, Zhang Z, Zhang Z, Lv S, Dai X, Lei T.   +15 more
europepmc   +2 more sources

Current-density fluctuations and ambipolarity of transport [PDF]

Physical Review Letters, 1992
The fluctuation in the plasma current density is measured in the MIST reversed field pinch experiment. Such fluctuations, and the measured radial profile of the k spectrum of magnetic fluctuations, supports the view and that low frequency fluctuations (f ) demonstrates that radial particle transport from particle motion parallel to a fluctuating ...
, Shen, , Dexter, , Prager
openaire   +6 more sources

Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

Micromachines, 2023
In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current.
Chan Shan, Lan Yang, Ying Liu, Zi-Meng Liu, Han Zheng   +4 more
doaj   +1 more source

MMS Observations of a Compressed Current Sheet: Importance of the Ambipolar Electric Field

Physical Review Letters, 2022
Spacecraft data reveals a nonuniform ambipolar electric field transverse to the magnetic field in a thin magnetotail current sheet that leads to intense ExB velocity shear and non-gyrotropic particle distributions. The ExB drift far exceeds the diamagnetic drift and drives lower hybrid waves localized to the magnetic field reversal region, which is ...
Ami M. DuBois, Chris Crabtree, Gurudas Ganguli, David M. Malaspina, William E. Amatucci   +4 more
openaire   +3 more sources

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Nanoscale Research Letters, 2020
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen   +4 more
doaj   +1 more source