Results 31 to 40 of about 7,142,378 (255)
Micromachines, 2023 In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen +7 more
doaj +1 more source
Ambipolar light-emitting organic field-effect transistor [PDF]
, 2004 We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N ...
Rost, Constance +6 more
core +2 more sources
Tuning the ambipolar behaviour of organic field effect transistors via band engineering
AIP Advances, 2019 We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc).
P. R. Warren +4 more
doaj +1 more source
Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET
Alexandria Engineering Journal, 2023 CNTFET device structures are gaining more research interest as conventional FET structures are reaching their scaling limits. One of the most crucial effects that could occur in the fabrication on the nanometer scale is the gate misalignment.
A. Salah +3 more
doaj +1 more source
Selenophene π-Bridge Enables Balanced Ambipolar Transport in High-Performance Organic Electrochemical Transistors. [PDF]
Adv Sci (Weinh)We synthesized a high‐performance balanced ambipolar OECT polymer, P(gTDPPSe), via selenophene π‐bridge engineering. The selenophene π‐bridge enhances backbone planarity and optimizes the energy levels for doping, enabling high and balanced p/n‐type transconductance‐a key factor for high‐gain complementary inverters.
Zhu G, Lai Y, Pu J, Chen J, Feng LW.
europepmc +2 more sources
Micromachines, 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim +3 more
doaj +1 more source
Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
doaj +1 more source
Gate-Tunable Ambipolar Josephson Current in a Topological Insulator
Nano Letters26 pages, 4 figures, comments are ...
Bomin Zhang +11 more
openaire +3 more sources
Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
Micromachines, 2019 Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Hwa Young Gu, Sangwan Kim
doaj +1 more source
The singular behaviour of ambipolar diffusion revealed by 1D Cartesian solutions
Astronomy & AstrophysicsContext. Ambipolar diffusion is increasingly recognised as a key process in the lower solar atmosphere. Its highly non-linear behaviour has many non-intuitive aspects. Aims.
Moreno-Insertis F. +2 more
doaj +1 more source