Results 31 to 40 of about 3,294 (243)

Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductor

, 2010
Copyright 2010 by the American Physical Society. Article is available at
N. Stingelin, T. Kreouzis, Song, JY, J. Y. Song, W. P. Gillin, Stingelin, N, Kreouzis, T, Gillin, WP, Drew, AJ, A. J. Drew   +9 more
core   +1 more source

Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

Nano Letters
26 pages, 4 figures, comments are ...
Bomin Zhang, Xiaoda Liu, Junjie Qi, Ling-Jie Zhou, Deyi Zhuo, Han Tay, Hongtao Rong, Annie G. Wang, Zhiyuan Xi, Chao-Xing Liu, Chui-Zhen Chen, Cui-Zu Chang   +11 more
openaire   +3 more sources

The singular behaviour of ambipolar diffusion revealed by 1D Cartesian solutions

Astronomy & Astrophysics
Context. Ambipolar diffusion is increasingly recognised as a key process in the lower solar atmosphere. Its highly non-linear behaviour has many non-intuitive aspects. Aims.
Moreno-Insertis F., Priest E. R., Nóbrega-Siverio D.   +2 more
doaj   +1 more source

Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

, 2016
Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)­
Xingyun Li, Hui-Xiong Deng, Zhongming Wei (1650643), Xingyun Li (2828711), Le Huang, Zhongming Wei, Jingbo Li, Hui-Xiong Deng (2828708), Xiaoting Wang, Yan Wang (15435), Yongtao Li, Yongtao Li (371642), Yan Wang, Xiaoting Wang (206653), Le Huang (332269), Jingbo Li (124294)   +15 more
core   +1 more source

Ambipolar organic permeable base transistors

, 2019
Organic transistors with vertical current transport like the Permeable Base Transistor (PBT) show a high performance while allowing for an easy fabrication on the device level.
Fischer, Axel, Kaschura, Felix, Kasemann, Daniel, Leo, Karl   +3 more
core   +1 more source

High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted Perylene and Anthracene

Advanced Science, 2023
Emissive organic semiconductors are highly demanding for organic light‐emitting transistors (OLETs) and electrically pumped organic lasers (EPOLs). However, it remains a great challenge to obtain organic semiconductors with high carrier mobility and high
Liangliang Chen, Zhengsheng Qin, Han Huang, Jing Zhang, Zheng Yin, Xiaobo Yu, Xi‐sha Zhang, Cheng Li, Guanxin Zhang, Miaofei Huang, Huanli Dong, Yuanping Yi, Lang Jiang, Hongbing Fu, Deqing Zhang   +14 more
doaj   +1 more source

Transient Charging of Mixed Ionic‐Electronic Conductors by Anomalous Diffusion

Advanced Materials, EarlyView.
This article explores charge transport in mixed ionic‐electronic conductors (MIECs) through electrochemical impedance spectroscopy and transient current analysis. Focusing on PEDOT:PSS, WO3, and n‐doped PBDF, it uncovers the impact of anomalous diffusion via fractional modeling. The study reveals key correlations that deepen understanding and guide the
Heyi Zhang, Gonzalo Rivera‐Sierra, Shirin Siahjani‐Gultekin, Jenifer Rubio‐Magnieto, Anis Allagui, Ignacio Sanjuán, David Franco, Antonio Guerrero, Enrique H. Balaguera, Juan Bisquert   +9 more
wiley   +1 more source

Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C [PDF]

, 2012
In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V ...
MARIO MORENO MORENO, Miguel Dominguez, CARLOS ZUÑIGA ISLAS, Wilfrido Calleja Arriaga, Pedro Rosales Quintero, Joel Molina Reyes, ALFONSO TORRES JACOME, FRANCISCO JAVIER DE LA HIDALGA WADE   +7 more
core  

Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC

, 2022
S.487-490In this study, we present results on electrical characterization of bipolar pn-diodes to investigate the temperature and electrical field dependent behavior of ambipolar mobility in n-doped 4H-SiC.
Mitlehner, H., Hürner, A., Clemmer, G., Bonse, C., Frey, L., Erlbacher, T., Kallinger, B., Heckel, T., Bauer, A.J., Häublein, V.   +9 more
core   +1 more source

Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering

Ain Shams Engineering Journal, 2023
In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique.
Mahmoud Ossaimee, Ahmed Salah, Salah H. Gamal, Ahmed Shaker, M.S. Salem   +4 more
doaj   +1 more source