Results 1 to 10 of about 5,733 (288)

Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET [PDF]

Micromachines, 2023
In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current.
Chan Shan, Lan Yang, Ying Liu, Zi-Meng Liu, Han Zheng   +4 more
doaj   +7 more sources

Absence of Additional Stretching‐Induced Electron Scattering in Highly Conductive Cross‐linked Nanocomposites with Negligible Tunneling Barrier Height and Width

Advanced Science
The intrinsic resistance of stretchable materials is dependent on strain, following Ohm's law. Here the invariable resistance of highly conductive cross‐linked nanocomposites over 53% strain is reported, where additional electron scattering is absent ...
C. Muhammed Ajmal, Juyeong Jeong, Seongsu Cheon, M. K. Majee, Heejun Yang, Seunghyun Baik   +5 more
doaj   +5 more sources

Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency

Results in Physics, 2021
The effect of quantum barrier width and electric field on the resonant tunneling through the double barrier In0.2Ga0.8N/GaN parabolic-quantum well light-emitting diode (LED) structure and LED efficiency was investigated analytically.
Hind Althib
doaj   +4 more sources

A general scenario of tunneling time in different energy regimes

New Journal of Physics, 2022
We theoretically study the tunneling time by investigating a wave packet of Bose-condensed atoms passing through a square barrier. We find that the tunneling time exhibits different scaling laws in different energy regimes.
Sheng-Chang Li
doaj   +2 more sources

The dependence of resonant tunneling transmission coefficient on well width and barriers number of GaN/Al0.3Ga0.7N nanostructured system

Iraqi Journal of Physics, 2019
A numerical computation for determination transmission coefficient and resonant tunneling energies of multibarriers heterostructure has been investigated.
Moafak Cadim Abdulrida
doaj   +3 more sources

Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis [PDF]

IEEE Access, 2021
In this paper, using calibrated TCAD simulations, we demonstrate how the performance of a Tunneling FET (TFET) can be improved by using a new phenomenon called drain induced barrier widening (DIBW) at the source-channel junction.
Mamidala Karthik Ram, Neha Tiwari, Dawit Burusie Abdi, Sneh Saurabh   +3 more
doaj   +2 more sources

Supercontinuum Generation from Airy-Gaussian Pulses in Photonic Crystal Fiber with Three Zero-Dispersion Points

Photonics, 2023
The supercontinuum generation and manipulation of Airy-Gaussian pulses in a photonic crystal fiber with three zero-dispersion points are studied using the split-step Fourier method. Firstly, the spectral evolution of Airy-Gaussian pulses in four photonic
Xinyi Yu, Bing Wen, Yangbao Deng, Chunhui Gao, Jiamou Wei, Saiwen Zhang, Qiuxiang Zhu   +6 more
doaj   +1 more source

Multiple Fano Resonances in Dynamic Resonant Tunneling Processes

Applied Sciences, 2023
The existence of Fano resonances in dynamic resonant tunneling (RT) systems has been investigated. Fano resonances are characterized by the appearance of a 100% reflection coefficient in proximity to a high transmission coefficient.
Gilad Zangwill, Er’el Granot
doaj   +1 more source

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

Nanomaterials, 2022
Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect
John A. Gil-Corrales, Juan A. Vinasco, Miguel E. Mora-Ramos, Alvaro L. Morales, Carlos A. Duque   +4 more
doaj   +1 more source