Results 21 to 30 of about 5,180 (250)

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]

مجله مدل سازی در مهندسی
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj   +1 more source

Comparison of a direct measure of barrier crossing times with indirect measures such as the Larmor time

New Journal of Physics, 2021
Different approaches for considering barrier crossing times are analyzed, with special emphasis on recent experiments which attempt to measure what is commonly referred to as the Larmor tunneling time.
Tom Rivlin, Eli Pollak, Randall S Dumont
doaj   +1 more source

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width [PDF]

Applied Physics Letters, 2011
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps.
Reckinger, N., Tang, Xing, Dubois, Emmanuel, Larrieu, G., Flandre, D., Raskin, J.P., Afzalian, A.   +6 more
openaire   +4 more sources

Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers

Results in Physics, 2020
In this paper, we investigated the effect of the central AlGaAs barrier width Lb2 in a resonant tunneling diode (RTD) composed by triple barriers on the current-voltage characteristics, and electronic density of free carriers.
Shaffa Almansour
doaj   +1 more source

On the Photo‐Carriers Dynamic Regulation by Piezo‐Phototronic Effect in Metal‐Oxide–Semiconductor Tunneling Junction

Advanced Materials Interfaces, 2023
The piezo‐phototronic effect can modulate the dynamics of photo‐generated carriers by utilizing external‐strain–induced piezoelectric charges (piezo‐charges).
Yitong Wang, Wenbo Peng, Zihao Huang, Danyang Huang, Wanli Xie, Fangpei Li, Yongning He   +6 more
doaj   +1 more source

Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

AIP Advances, 2012
Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time) in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by
Farhad Sattari, Edris Faizabadi
doaj   +1 more source

Impact of Antisite Disorder on the Resistivity of Strontium Ferromolybdate Ceramics

Electronic Materials
In this work, we consider the influence of antisite disorder, e.g., Fe ions on Mo sites, FeMo, and vice versa, MoFe, on the resistivity of strontium ferromolybdate ceramics fabricated by the solid-state reaction method.
Gunnar Suchaneck, Evgenii Artiukh, Nikolai Kalanda, Marta Yarmolich, Gerald Gerlach   +4 more
doaj   +1 more source

Accelerating Quantum Decay by Multiple Tunneling Barriers

Entropy, 2023
A quantum particle constrained between two high potential barriers provides a paradigmatic example of a system sustaining quasi-bound (or resonance) states.
Ermanno Pinotti, Stefano Longhi
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source