Results 31 to 40 of about 5,733 (288)

Impact of Antisite Disorder on the Resistivity of Strontium Ferromolybdate Ceramics

Electronic Materials
In this work, we consider the influence of antisite disorder, e.g., Fe ions on Mo sites, FeMo, and vice versa, MoFe, on the resistivity of strontium ferromolybdate ceramics fabricated by the solid-state reaction method.
Gunnar Suchaneck, Evgenii Artiukh, Nikolai Kalanda, Marta Yarmolich, Gerald Gerlach   +4 more
doaj   +1 more source

Accelerating Quantum Decay by Multiple Tunneling Barriers

Entropy, 2023
A quantum particle constrained between two high potential barriers provides a paradigmatic example of a system sustaining quasi-bound (or resonance) states.
Ermanno Pinotti, Stefano Longhi
doaj   +1 more source

Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates

, 2014
The properties of graphene nanoribbons are dependent on both the nanoribbon width and the crystallographic orientation of the edges. Scanning tunneling microscope lithography is a method which is able to create graphene nanoribbons with well defined edge
Dobrik, G., Jin, X., Magda, G. Zs., Hwang, C., Osváth, Z., Nemes Incze, Péter, Biró, L. P., Tapasztó, Levente   +7 more
core   +1 more source

Superluminal Tunneling of a Relativistic Half-Integer Spin Particle Through a Potential Barrier

, 2018
This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier.
L. Nanni
core   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Longitudinal and transversal resonant tunneling of interacting bosons in a two-dimensional Josephson junction

Scientific Reports, 2022
We unravel the out-of-equilibrium quantum dynamics of a few interacting bosonic clouds in a two-dimensional asymmetric double-well potential at the resonant tunneling scenario.
Anal Bhowmik, Ofir E. Alon
doaj   +1 more source

A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P⁺-Pocket and InAlAs-Block

Micromachines, 2023
To give consideration to both chip density and device performance, an In0.53Ga0.47As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and an In0.52Al0.48As-block (VPB-EHBTFET) is introduced and systematically ...
Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang, Yao Li   +7 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source