Results 31 to 40 of about 5,180 (250)

Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures

Results in Surfaces and Interfaces
The transfer matrix method is employed to study the electron tunneling in GaAs/GaAlAs triangular double-barrier heterostructure. The barrier width enhances the tunneling lifetime of electrons. Without Γ – X crossover in the conduction band, the resonance
L. Bruno Chandrasekar, Lalitha Gnanasekaran, Madhappan Santhamoorthy, E. Priyadharshini, M. Karunakaran, Manikandan Ayyar, P. Shunmuga Sundaram   +6 more
doaj   +1 more source

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Longitudinal and transversal resonant tunneling of interacting bosons in a two-dimensional Josephson junction

Scientific Reports, 2022
We unravel the out-of-equilibrium quantum dynamics of a few interacting bosonic clouds in a two-dimensional asymmetric double-well potential at the resonant tunneling scenario.
Anal Bhowmik, Ofir E. Alon
doaj   +1 more source

A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P⁺-Pocket and InAlAs-Block

Micromachines, 2023
To give consideration to both chip density and device performance, an In0.53Ga0.47As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and an In0.52Al0.48As-block (VPB-EHBTFET) is introduced and systematically ...
Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang, Yao Li   +7 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Long-range quantum tunneling via matter waves

Communications Physics
Quantum tunneling is a quantum phenomenon in which a microscopic object crosses through a potential barrier even if its energy cannot overcome the barrier. A general belief is that tunneling occurs only when the barrier width is comparable to, or smaller
Yuan-Xing Yang, Si-Yuan Bai, Jun-Hong An
doaj   +1 more source

Dislocation Kinks in Copper: Widths, Barriers, Effective Masses, and Quantum Tunneling

, 2000
We calculate the widths, migration barriers, effective masses, and quantum tunneling rates of kinks and jogs in extended screw dislocations in copper, using an effective medium theory interatomic potential. The energy barriers and effective masses for moving a unit jog one lattice constant are close to typical atomic energies and masses: tunneling will
Vegge, Tejs, Sethna, James P., Cheong, Siew-Ann, Jacobsen, Karsten W., Myers, Christopher R., Ralph, Daniel C.   +5 more
openaire   +2 more sources

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

Advanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi, Mario Palacios‐Corella, Arjan Mol, Salvador Pané, Josep Puigmartí‐Luis   +4 more
wiley   +1 more source