Results 51 to 60 of about 5,180 (250)

Klein Tunneling in β₁₂ Borophene

Nanomaterials
Motivated by the recent observation of Klein tunneling in 8-Pmmn borophene, we delve into the phenomenon in β12 borophene by employing tight-binding approximation theory to establish a theoretical mode.
Jinhao Lai, Lekang Wang, Fu Li, Hongbin Zhang, Qingtian Zhang   +4 more
doaj   +1 more source

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

AIP Advances, 2016
In this paper, a silicon–on–insulator (SOI) p–n–p–n tunneling field–effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to ...
Saeid Marjani, Seyed Ebrahim Hosseini, Rahim Faez   +2 more
doaj   +1 more source

Transport properties through graphene with sequence of alternative magnetic barriers and wells in the presence of time-periodic scalar potential

Scientific Reports, 2021
We investigate the electronic transport properties of a graphene sheet under the magnetic barriers and wells through the oscillating scalar potential combined with the static scalar potential barrier having two types of uniform and alternative profiles ...
Fatemeh Pakdel, Mohammad Ali Maleki
doaj   +1 more source

Comparative Analysis of Work Function Measurement Techniques Based on Scanning Probe Microscopy

Advanced Materials, EarlyView.
Non‐contact scanning probe microscopy visualizes the surface topography based on surface electronic properties. The tunneling current, which defines the geometry of the tunnel–junction, has to overcome the effective surface work function barrier to reach the probe from the surface.
Daryoush Nosraty Alamdary, Matthias Bode, Artem Odobesko   +2 more
wiley   +1 more source

Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications

Advanced Materials, EarlyView.
Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko, Chiamaka Akah, Ravinder Dahiya   +2 more
wiley   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Flexible Pressure Sensor With Co‐Optimized Sensitivity and Linearity Based on Gradient Toroidal Microstructures

Advanced Materials Technologies, EarlyView.
A flexible piezoresistive pressure sensor with gradient toroidal CNT/PDMS microstructures is reported. The hierarchical geometry enables sequential electrode contact, achieving a sensitivity of 256.20 kPa−1 and linear response (R2 = 0.99) over 0–1000 kPa.
Rongmei Wang, Ruolin Liu, Ming Lei, Yifan Liu, Fengming Hu, Bing Ji, Chao Peng, Jianyi Luo, Bingpu Zhou   +8 more
wiley   +1 more source

Deconvolution of the density of states of tip and sample through constant-current tunneling spectroscopy

Beilstein Journal of Nanotechnology, 2011
We introduce a scheme to obtain the deconvolved density of states (DOS) of the tip and sample, from scanning tunneling spectra determined in the constant-current mode (z–V spectroscopy).
Holger Pfeifer, Berndt Koslowski, Paul Ziemann   +2 more
doaj   +1 more source