Results 71 to 80 of about 5,733 (288)
An atomically precise platform was developed for investigating single‐molecule charge transport. This innovative platform enables the creation of highly uniform molecular devices using ruthenium‐based molecules. It reveals a significant enhancement in molecular conductance due to the metallic ruthenium center and a unique barrier‐lowering effect during
Jie Guo +15 more
wiley +1 more source
We introduce a scheme to obtain the deconvolved density of states (DOS) of the tip and sample, from scanning tunneling spectra determined in the constant-current mode (z–V spectroscopy).
Holger Pfeifer +2 more
doaj +1 more source
Laser‐induced graphene (LIG) provides a scalable, laser‐direct‐written route to porous graphene architecture with tunable chemistry and defect density. Through heterojunction engineering, catalytic functionalization, and intrinsic self‐heating, LIG achieves highly sensitive and selective detection of NOX, NH3, H2, and humidity, supporting next ...
Md Abu Sayeed Biswas +6 more
wiley +1 more source
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang +14 more
wiley +1 more source
Ultrathin GaOx tunneling contact for 2D transition-metal dichalcogenides transistor
Interlayer insertion has emerged as one of the key strategies for contact engineering in two-dimensional (2D) field-effect transistors (FETs). However, conventional interlayers such as hexagonal boron nitride (hBN) have limitations in contact performance
Yun Li +9 more
doaj +1 more source
The form of the external potential (FEP) for generating field emission resonance (FER) in a scanning tunneling microscopy (STM) junction is usually assumed to be triangular.
Shin-Ming Lu +5 more
doaj +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
A novel approach for determining the peak-to-valley current ratio in nanomaterial devices
The peak-to-valley current ratio (PVCR) was determined using a new method based on the transfer matrix technique. This method was applied to right-triangular (sawtooth) and rectangular nanomaterial double barrier diodes composed of GaAs-Ga1-yAlyAs ...
A.M. Elabsy
doaj +1 more source
Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density
Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect.
Kevin Chen +8 more
doaj +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source

