Results 81 to 90 of about 5,733 (288)

Geometry engineering of tunneling transistors in transition metal dichalcogenide nanoribbon heterojunctions

Communications Physics
Graphene nanoribbon heterojunctions are promising one-dimensional materials for quantum electronics due to their tunable bandgap and sizable quantum confinement.
Ye Jiang, Minjiang Dan, Shuaiwei Fan, Gongwei Hu, Fobao Huang, Wei-Yang Wang, Qiao Chen   +6 more
doaj   +1 more source

Tunneling in Double-Barrier Heterostructures - Comparison of Time-Dependent and Stationary Approach

, 1993
The tunneling probability through a double-barrier ZnSe/ZnTe structure is calculated using both wave-packet time dependent quantum mechanics and stationary planar-wave approximation. The obtained I-V characteristics are compared and very good consistence
Bała, W., Ryszewski, R., Bała, P.
core   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Analytical Expressions for Tunneling Time through Single and Double Barrier Structures

, 1993
In the past, the quantum mechanical tunneling time through simple rectangular barrier has been obtained by various theoretical approaches including the dwell time, the phase delay time, the Larmor clock time and also using the numerical analysis of wave ...
Cahay, M., Venkat, Rama, Thanikasalam, P.   +2 more
core   +1 more source

Polarization modulation in GaN-based double-barrier resonant tunneling diodes

, 2014
The effect of polarization modulation on GaN-based double-barrier resonant tunneling diodes is theoretically investigated. The polarization field is shown to improve the performance of these devices by increasing the peak current, peak-to-valley ratio ...
SANKARANARAYANAN, S, GANGULY, S, SAHA, D
core   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

Active and Passive Electronic Components, 2017
In the current study, an Au/BN/C microwave back-to-back Schottky device is designed and characterized. The device morphology and roughness were evaluated by means of scanning electron and atomic force microscopy.
Hazem K. Khanfar, A. F. Qasrawi, Yasmeen Kh. Ghannam   +2 more
doaj   +1 more source

Impact of interfacial roughness on tunneling conductance and extracted barrier parameters

, 2007
The net tunneling conductance of metal-insulator-metal tunnel junctions is studied using a distribution of barrier thicknesses consistent with interfacial roughness typical of state-of-the-art tunnel junctions.
Johan Åkerman, Schuller, Ivan K., Åkerman, Johan,, Casey W. Miller, Li, Zhi-Pan, Miller, Casey W., Zhi-Pan Li, Ivan K. Schuller   +7 more
core   +1 more source

Ultrathin Quasi‐2D Perovskite‐Organic Segregated‐Structure Coupling for High‐Performance Narrowband Photomultiplication Detectors

Advanced Science, EarlyView.
Quasi‐2D perovskite‐organic segregated‐structure coupling enables low‐power narrowband photomultiplication photodetectors with 110 nm perovskite layer. The optimal device achieves 1200% EQE and 1.82 × 1011 Jones D* at 3 V, offering a new strategy for miniaturized high‐selectivity optoelectronic sensing.
Hongfei Qu, Peng He, Xingchao Zhao, Yongchao Xie, Fulong Huang, Xiaoling Ma, Byung Hui Lee, Han Young Woo, Yumeng Shi, Zuliang Zhuo, Fujun Zhang, Xixiang Zhu   +11 more
wiley   +1 more source

Combined study of quantum confinement and hydrostatic pressure effects in a GaAs/AlxGa1−xAs heterostructure resonant tunneling diode

Scientific African
This study presents an in-depth theoretical investigation of the effects of hydrostatic pressure on the electronic and transport properties of a GaAs/AlxGa1−xAs triple-barrier resonant tunneling diode (RTD) at low temperatures.
A. Baidri, B. EL-Mahi, H. Oudghiri, F. Falyouni, D. Bria   +4 more
doaj   +1 more source