Results 41 to 50 of about 5,180 (250)

Quenching effect of oscillating potential on anisotropic resonant transmission through a phosphorene electrostatic barrier

Scientific Reports, 2021
The anisotropy in resonant tunneling transport through an electrostatic barrier in monolayer black phosphorus either in presence or in absence of an oscillating potential is studied.
R. Biswas, C. Sinha
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Simulation and Fabrication of Double Barrier Structure of P-I-N Amorphous Silicon (a-Si) Device

Journal of Mathematical and Fundamental Sciences, 2019
. The application of double barrier (DB) structure in p-i-n amorphous silicon (a-Si) device was studied. The theoretical study was done to obtain device parameters such as tunneling probability and current density.
Ida Hamidah, Kardiawarman Kardiawarman, Budi Mulyanti, Andi Suhandi   +3 more
doaj  

Resonant Tunneling in Laser‐Dressed Double‐Barrier Nanostructures: Role of Potential Geometry

Advanced Physics Research
This work examines resonant tunneling in laser‐dressed double‐barrier semiconductor nanostructures using the transfer matrix method. Rectangular, parabolic, and triangular barrier geometries are considered to examine the influence of potential shape on ...
Recep Aydın, Mehmet Batı
doaj   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

Design Considerations of Structural Parameters in Resonant Tunneling Diode by None-Equilibrium Green Function Method [PDF]

Журнал нано- та електронної фізики, 2015
This paper presents the effects of structural parameters like Quantum well width, barrier width, spacer width, contact width and contact doping, on performance of Resonant Tunneling Diode using full quantum simulation.
M. Charmi, M.H. Yousefi
doaj  

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

When Poor Exciton Dissociation Limits Photocurrents in Organic Solar Cells: Why Low Offset Non‐Fullerene Acceptor Blends Can't Be Efficient

Advanced Materials, EarlyView.
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley   +1 more source

Photo‐ and Thermally‐Induced Huge Layer Decoupling in Twisted Bilayer WSe2

Advanced Materials, EarlyView.
A newly developed automated dark‐field tomography visualizes twist‐angle‐dependent structural relaxation and quantifies 3D structures in twisted bilayer WSe2. This approach reveals the evolution of local stacking configurations, thermally induced sub‐ångström interlayer decoupling, and light‐driven interlayer expansion on picosecond timescales ...
A. Nakamura, Y. Chiashi, T. Shimojima, Y. Tanaka, S. Akatsuka, M. Sakano, S. Masubuchi, T. Machida, K. Watanabe, T. Taniguchi, K. Ishizaka   +10 more
wiley   +1 more source