Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems
Nanomaterials, 2022 Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect
John A. Gil-Corrales +4 more
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Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension [PDF]
Journal of Optoelectronical Nanostructures, 2023 :For the first time, in this research, we introduce ajunctionless tunneling FET (J-TFET) on a uniform p+starting junctionless FET to realize appreciable immunityagainst inherent high ambipolar current (Iamb).
Morteza Rahimian
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Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier
Open Physics, 2017 This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier.
Nanni Luca
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Crystals, 2023 In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero ...
Hang Chen +6 more
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Electron tunnelling through a quantifiable barrier of variable width
Journal of Physics: Conference Series, 2009 This is the first study of electron tunnelling through a quantifiable barrier of adjustable width. We find quantitative agreement between the measured and calculated tunnelling probability with no adjustable constants. The tunnel barrier is a thin film of 3He on Cs1 which it wets.
A F G Wyatt +4 more
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Tunneling Time in Attosecond Experiments and Time Operator in Quantum Mechanics
Mathematics, 2018 Attosecond science is of a fundamental interest in physics. The measurement of the tunneling time in attosecond experiments, offers a fruitful opportunity to understand the role of time in quantum mechanics (QM).
Ossama Kullie
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Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
IEEE Journal of the Electron Devices Society, 2014 In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
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Journal of Electronic Science and Technology, 2023 A silicon (Si)/silicon carbide (4H–SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations.
Hang Chen, You-Run Zhang
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Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]
Journal of Optoelectronical Nanostructures, 2022 In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand +2 more
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Electron tunneling through barriers of adjustable width: Role of the image potential and the wetting behavior of Cs by He [PDF]
Physical Review B, 2008 Photocurrents from cesium, flowing through gaseous 3 He or 4 He and also through thin liquid helium films, are investigated as a function of the chemical potential of helium at T = 1.33 K. At low pressures, the two isotopes behave similarly as the photocurrent is governed by scattering by the gas. At higher pressures, a film of 3 He grows on the Cs and
Zech, Martin +4 more
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