Results 11 to 20 of about 5,733 (288)

Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

Open Physics, 2017
This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier.
Nanni Luca
doaj   +3 more sources

Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures

Results in Surfaces and Interfaces
The transfer matrix method is employed to study the electron tunneling in GaAs/GaAlAs triangular double-barrier heterostructure. The barrier width enhances the tunneling lifetime of electrons. Without Γ – X crossover in the conduction band, the resonance
L. Bruno Chandrasekar, Lalitha Gnanasekaran, Madhappan Santhamoorthy, E. Priyadharshini, M. Karunakaran, Manikandan Ayyar, P. Shunmuga Sundaram   +6 more
doaj   +2 more sources

The Intrinsic Barrier Width and its Role in Chemical Reactivity

, 2023
The Marcus dissection of the Gibbs activation energy (barrier height) into intrinsic and thermodynamic contributions, which successfully models the interplay of rate and driving force, has led to a crucial general phenomenological consequence: the well ...
Guanqi, Qiu, Peter Richard, Schreiner
core   +4 more sources

Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension [PDF]

Journal of Optoelectronical Nanostructures, 2023
:For the first time, in this research, we introduce ajunctionless tunneling FET (J-TFET) on a uniform p+starting junctionless FET to realize appreciable immunityagainst inherent high ambipolar current (Iamb).
Morteza Rahimian
doaj   +1 more source

A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism

Crystals, 2023
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero ...
Hang Chen, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li, Bo Zhang   +6 more
doaj   +1 more source

Electron tunnelling through a quantifiable barrier of variable width

Journal of Physics: Conference Series, 2009
This is the first study of electron tunnelling through a quantifiable barrier of adjustable width. We find quantitative agreement between the measured and calculated tunnelling probability with no adjustable constants. The tunnel barrier is a thin film of 3He on Cs1 which it wets.
A F G Wyatt, H Bromberger, J Klier, P Leiderer, M Zech   +4 more
openaire   +1 more source

Tunneling Time in Attosecond Experiments and Time Operator in Quantum Mechanics

Mathematics, 2018
Attosecond science is of a fundamental interest in physics. The measurement of the tunneling time in attosecond experiments, offers a fruitful opportunity to understand the role of time in quantum mechanics (QM).
Ossama Kullie
doaj   +1 more source

Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

IEEE Journal of the Electron Devices Society, 2014
In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
doaj   +1 more source

Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

Journal of Electronic Science and Technology, 2023
A silicon (Si)/silicon carbide (4H–SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations.
Hang Chen, You-Run Zhang
doaj   +1 more source

Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Journal of Optoelectronical Nanostructures, 2022
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand, Zahra Ahangari, Hamed Nematian   +2 more
doaj   +1 more source