Results 51 to 60 of about 2,236 (212)

Ionospheric Ambipolar Electric Fields of Mars and Venus: Comparisons Between Theoretical Predictions and Direct Observations of the Electric Potential Drop

open access: yesGeophysical Research Letters, 2019
We test the hypothesis that their dominant driver of a planetary ambipolar electric field is the ionospheric electron pressure gradient (∇Pe). The ionospheres of Venus and Mars are mapped using Langmuir probe measurements from NASA's Pioneer Venus ...
Glyn Collinson   +7 more
doaj   +1 more source

Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

open access: yesApplied Sciences, 2020
Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

open access: yesAdvanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung   +7 more
wiley   +1 more source

Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

open access: yesIEEE Journal of the Electron Devices Society, 2018
Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annealing
H. M. Zheng   +9 more
doaj   +1 more source

Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging

open access: yesAdvanced Science, EarlyView.
A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn   +2 more
wiley   +1 more source

Concentration‐Driven Li+ Solvation Engineering with TDMAP‐Based Porphyrin Additives for Dendrite‐Free Li Metal Batteries

open access: yesAdvanced Science, EarlyView.
The electrolyte engineering of introducing tetrakis(4‐N, N‐dimethylaminophenyl)porphyrin (TDMAP) is designed to modulate Li+ solvation structure and solid electrolyte interphase, where the interaction with PF₆− anions is altered (Li+–NMe2–PF₆−). Consequently, the cells with optimal additive concentration achieve high Coulombic efficiency (∼99%), and ...
Pooria Afzali   +5 more
wiley   +1 more source

Bandgap modulated phosphorene based gate drain underlap double-gate TFET

open access: yesAIP Advances, 2018
In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Md. Abdullah-Al-Kaiser   +2 more
doaj   +1 more source

Selenophene π‐Bridge Enables Balanced Ambipolar Transport in High‐Performance Organic Electrochemical Transistors

open access: yesAdvanced Science, EarlyView.
We synthesized a high‐performance balanced ambipolar OECT polymer, P(gTDPPSe), via selenophene π‐bridge engineering. The selenophene π‐bridge enhances backbone planarity and optimizes the energy levels for doping, enabling high and balanced p/n‐type transconductance‐a key factor for high‐gain complementary inverters.
Guichuan Zhu   +4 more
wiley   +1 more source

Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap [PDF]

open access: yesمجله مدل سازی در مهندسی, 2019
Underlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for ...
Ali Naderi, Maryam Ghodrati
doaj   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

open access: yesAdvanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong   +10 more
wiley   +1 more source

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