Results 61 to 70 of about 2,236 (212)

Efficient Hot Carrier Management in Lead Halide Perovskite Micro‐Disks Revealed by Super‐Diffusive Migration

open access: yesAdvanced Science, EarlyView.
Hot‐carrier transport in metal halide perovskites is investigated using spatiotemporally‐resolved photoluminescence microscopy. Mesa‐shaped MAPbBr3 microdisks exhibit anomalous super‐diffusive carrier propagation on nanosecond timescales, driven by hot‐carrier stabilization and strong carrier–phonon coupling.
Nithin Pathoor   +2 more
wiley   +1 more source

Ambipolarity suppression in electrically doped tunnel field effect transistor using asymmetric bias in polarity gates

open access: yese-Prime: Advances in Electrical Engineering, Electronics and Energy
In this article, we have addressed an important issue called ambipolarity in electrically doped tunnel field effect transistors, which greatly hinders its use in circuit applications.
Akshatha Bhat   +5 more
doaj   +1 more source

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

open access: yesAdvanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu   +5 more
wiley   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

open access: yesAdvanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park   +6 more
wiley   +1 more source

Engineering Dirac Cones in Graphene for Efficient Iodide Catalysis: Insights by Nanoscale Electrochemistry

open access: yesAdvanced Science, EarlyView.
Graphene iodide oxidation is regulated by Dirac cone engineering. Electrostatic gating tunes the Fermi level to control local iodide oxidation reaction activity, while magic‐angle twisted bilayer graphene creates flat‐band‐derived interfacial states that promote charge transfer and iodine‐species interaction, revealing a nanoscale route to electronic ...
Yang‐Sheng Lu   +13 more
wiley   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami   +7 more
wiley   +1 more source

Electrical noise, temperature fluctuations and sensitivity of a vertical TFET based biosensor with dielectric pocket under the influence of interface trap charges

open access: yesDiscover Electronics
This work analyses the sensing properties of a vertical TFET-based biosensor with a dielectric pocket accounting for reliability aspects including interface trap charges (ITCs), steric hindrance, electrical noise and temperature fluctuations.
Debika Das   +5 more
doaj   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo   +11 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez   +10 more
wiley   +1 more source

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