Results 61 to 70 of about 7,142,378 (255)

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Interfacial energy band bending and carrier trapping at the vacuum-deposited MAPbI3 perovskite/gate dielectric interface

Results in Physics, 2018
We report energy band bending of methylammonium lead halide (MAPbI3) perovskite film in contact with indium-tin-oxide (ITO) surface using photoelectron spectroscopy in air (PESA) and ultraviolet photoelectron spectroscopy (UPS) measurements.
Yujin Park, Byoungnam Park
doaj   +1 more source

Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells

Advanced Materials, EarlyView.
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang, Christopher Wöpke, Toni Seiler, Jared Faisst, Mathias List, Meike Kuhn, Bekcy Joseph, Alexander Ehm, Dietrich R. T. Zahn, Yana Vaynzof, Eva M. Herzig, Roderick C. I. Mackenzie, Uli Würfel, Maria Saladina, Carsten Deibel   +14 more
wiley   +1 more source

Ionospheric Ambipolar Electric Fields of Mars and Venus: Comparisons Between Theoretical Predictions and Direct Observations of the Electric Potential Drop

Geophysical Research Letters, 2019
We test the hypothesis that their dominant driver of a planetary ambipolar electric field is the ionospheric electron pressure gradient (∇Pe). The ionospheres of Venus and Mars are mapped using Langmuir probe measurements from NASA's Pioneer Venus ...
Glyn Collinson, Alex Glocer, Shaosui Xu, David Mitchell, Rudy A Frahm, Joseph Grebowsky, Laila Andersson, Bruce Jakosky   +7 more
doaj   +1 more source

Outlook and Emerging Semiconducting Materials for Ambipolar Transistors [PDF]

, 2014
Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on ...
Piliego, Claudia,, Bisri, Satria Zulkarnaen,, Loi, Maria Antonietta, Gao, Jia,, Piliego, Claudia, Gao, Jia, Loi, Maria Antonietta,, Bisri, Satria Zulkarnaen, Loi, Maria Antonietta; id_orcid   +8 more
core   +1 more source

Confinement‐Induced Donnan Potential Enables Sealed Hydrovoltaic Power From Microliter Water

Advanced Materials, EarlyView.
An ultrathin MXene/cellulose nanofiber (CNF) nanochannel‐based hydrovoltaic generator produces sustained direct current (DC) from a single microliter droplet under sealed operation. Asymmetric nanochannel confinement establishes a persistent ion gradient and a confinement‐induced Donnan potential, harvesting the interfacial free energy released upon ...
Sangyun Na, Geonyoung Jung, Yoojin Chang, Yun Goo Ro, Cheolhong Park, Jeonghee Yeom, Jinyoung Kim, Jeeyoon Kim, Hyejin Lee, Hyeji Oh, Hyunhyub Ko   +10 more
wiley   +1 more source

Effects of Al₂O₃ Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2018
Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annealing
H. M. Zheng, J. Gao, S. M. Sun, Q. Ma, Y. P. Wang, B. Zhu, W. J. Liu, H. L. Lu, S. J. Ding, David W. Zhang   +9 more
doaj   +1 more source

Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Applied Sciences, 2020
Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
doaj   +1 more source

Single-charge occupation in ambipolar quantum dots [PDF]

, 2020
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to ...
Bruijnes, F., van den Berg, T., de Almeida, A. J. Sousa, van de Ven, B., Amitonov, S. V., Seco, A. Marquez, Zwanenburg, F. A.   +6 more
core   +1 more source

Probing the Architecture of Organic Heterojunctions Based on Zn(Salen)‐Type/Lu(Bis‐phthalocyanine) Complexes and Their Potential Application as Gas Sensors

Advanced Materials Interfaces, EarlyView.
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà, Petr Bečvár, Martin Hruska, Rita Meunier‐Prest, Eric Lesniewska, Santo Di Bella, Marcel Bouvet   +6 more
wiley   +1 more source