Results 61 to 70 of about 3,294 (243)

Ambipolar diffusion in molecular cloud cores and the gravomagneto catastrophe [PDF]

, 2014
[[abstract]]This paper reexamines the problem of ambipolar diffusion as a mechanism for the production and runaway evolution of centrally condensed molecular cloud cores, a process that has been termed the gravomagneto catastrophe.
Adams, FC;Shu, FH
core   +1 more source

Ionospheric Ambipolar Electric Fields of Mars and Venus: Comparisons Between Theoretical Predictions and Direct Observations of the Electric Potential Drop

Geophysical Research Letters, 2019
We test the hypothesis that their dominant driver of a planetary ambipolar electric field is the ionospheric electron pressure gradient (∇Pe). The ionospheres of Venus and Mars are mapped using Langmuir probe measurements from NASA's Pioneer Venus ...
Glyn Collinson, Alex Glocer, Shaosui Xu, David Mitchell, Rudy A Frahm, Joseph Grebowsky, Laila Andersson, Bruce Jakosky   +7 more
doaj   +1 more source

Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Applied Sciences, 2020
Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
doaj   +1 more source

Vision‐Augmented Wearable Interfaces: Bioinspired Approaches for Realistic AI‐Human‐Machine Interaction

Advanced Materials Technologies, EarlyView.
This review presents recent progress in vision‐augmented wearable interfaces that combine artificial vision, soft wearable sensors, and exoskeletal robots. Inspired by biological visual systems, these technologies enable multimodal perception and intelligent human–machine interaction.
Jihun Lee, Gwuidong Ryu, Kisoo Kim, Feng Xu, Won Gu Lee   +4 more
wiley   +1 more source

Effects of Al₂O₃ Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2018
Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annealing
H. M. Zheng, J. Gao, S. M. Sun, Q. Ma, Y. P. Wang, B. Zhu, W. J. Liu, H. L. Lu, S. J. Ding, David W. Zhang   +9 more
doaj   +1 more source

Interfacial Engineering for Improved Stability of Flexible Perovskite Solar Cells

Energy Material Advances, 2022
Because of unique optoelectronic properties, such as extended carrier lifetime, large absorption coefficient, high defect tolerance factor, low exciton binding energy, and ambipolar diffusion, metal halide perovskites display enormous potential for the ...
Jie Dou, Qi Chen
doaj   +1 more source

Understanding Interfacial Photoswitching Mechanisms in Atomically‐Thin TMD‐Spiropyran Hybrids

Advanced Materials Technologies, EarlyView.
Photochromic molecules can effectively modulate the optoelectronic properties of atomically thin transition metal dichalcogenide semiconductors. Spiropyran that switches its chemical configuration upon alternating UV and visible irradiation enables light‐programmable optoelectronic devices.
Sewon Park, Jaehoon Ji, Michael Brophy, John Audi, Jean Rouillon, Carlos Benitez‐Martin, Joakim Andréasson, Jeong Ho You, Jong Hyun Choi   +8 more
wiley   +1 more source

Mitigating Efficiency Roll‐Off in Phosphor‐Sensitized Fluorescence OLEDs via Molecular Polarity‐Based Benzofuropyridine Host Engineering

Advanced Optical Materials, EarlyView.
Positional isomerism in dibenzofuran‐based n‐type hosts modulates molecular polarity, charge‐transport balance, and emissive‐layer packing. The higher‐polarity BFPDB‐2 host facilitates efficient energy funneling, reduced aggregation, and preferential dipole orientation, leading to phosphor‐sensitized fluorescence OLEDs with enhanced external quantum ...
Nargis Ali, Xuyao Song, Yun‐Hi Kim, Min Chul Suh   +3 more
wiley   +1 more source

Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors: Modeling, Optimization Using Particle Swarm Intelligence, and Fabrication

, 2019
A mathematical model and experimental analysis of the impact of oxide thickness on the ambipolar conduction in Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB CNTFETs) is presented.
P. Reena Monica, V. T. Sreedevi
core   +1 more source

Bandgap modulated phosphorene based gate drain underlap double-gate TFET

AIP Advances, 2018
In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Md. Abdullah-Al-Kaiser, Dip Joti Paul, Quazi D. M. Khosru   +2 more
doaj   +1 more source