Results 81 to 90 of about 7,142,378 (255)
Non‐volatile voltage control of magnetic configurations is achieved in a strain‐coupled multiferroic heterostructure. Voltage pulses reversibly interconvert giant single‐domain and multidomain magnetic states, which remain stable at zero applied voltage. ABSTRACT Voltage control of magnetic states in multiferroic heterostructures represents a promising
M. Ghidini +11 more
wiley +1 more source
Top-Split-Gate Ambipolar Organic Thin-Film Transistors
Split-gate ambipolar organic transistor technology is gaining interests as a practical solution for the implementation of complementary transistors. It is known that conventional ambipolar transistors suffer from poor DC gain, noise margin, and high ...
Kim, J.-J. +6 more
core +2 more sources
Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode.
Chun-Hsing Shih +3 more
core +1 more source
From Sourcing to End‐of‐Life: Sustainability Challenges and Opportunities in Organic Bioelectronics
Organic bioelectronics bridges biology and electronics using organic mixed ionic/electronic conductors. This Perspective addresses sustainability across the full lifecycle of organic bioelectronic materials and devices, offering a framework to guide material sourcing, synthesis, fabrication, application, and end‐of‐life strategies toward bioelectronic ...
Gwennaël Dufil +3 more
wiley +1 more source
A highly sensitive diketopyrrolopyrrole-based ambipolar transistor for selective detection and discrimination of xylene isomers [PDF]
An ambipolar poly(diketopyrrolopyrrole-terthiophene)-based field-effect transistor (FET) sensitively detects xylene isomers at low ppm levels with multiple sensing features.
McNeill, Christopher R. +34 more
core +1 more source
Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering
A novel asymmetric isolated gates dopant segregated Schottky barrier MOSFET (AIG DS‐SBMOS) for the suppression of ambipolar leakage current ( I AMB ) using gate engineering is reported.
S. Kale, P.N. Kondekar
openaire +1 more source
This work analyses the sensing properties of a vertical TFET-based biosensor with a dielectric pocket accounting for reliability aspects including interface trap charges (ITCs), steric hindrance, electrical noise and temperature fluctuations.
Debika Das +5 more
doaj +1 more source
Carrier trapping anisotropy in ambipolar SnO thin-film transistors
The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress ...
Luo, Hao, Liang, Lingyan, Cao, Hongtao
core
Ambipolar Materials for Gas Sensing
International audienceAmbipolar sensors have only appeared in the past decade, i.e. very late compared to the first ambipolar electronic devices. They have been obtained with resistors, organic field-effect transistors and heterojunctions.
R. Meunier-Prest +5 more
core +1 more source
This review explores emerging 2D materials beyond graphene, including graphdiyne, phosphorene, borophene, siloxene, MBene, antimonene, and germanene for Li/Na–S batteries. It analyzes their roles as sulfur hosts, metallic anode protectors, separators, and electrolyte fillers, emphasizing polysulfide suppression, dendrite inhibition, and interfacial ...
Naveen Kumar T. R +7 more
wiley +1 more source

