Results 81 to 90 of about 3,294 (243)

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

Ambipolar organic phototransistors based on 6,6'-dibromoindigo

, 2018
Ambipolar organic phototransistors were fabricated using a natural pigment 6,6-dibromoindigo (6-BrIG) as the active channel. These phototransistors yielded significantly enhanced currents upon light illumination with photoresponsivities and external ...
Gyoungsik Kim, Hanum Abdullah, Inho Song, Song, Inho, Abdullah, Hanum, Joon Hak Oh, Lee, Jungho, Hyoeun Kim, Yang, Changduk, Oh, Joon Hak, Changduk Yang, Kim, Hyoeun, Kim, Gyoungsik, Jungho Lee   +13 more
core   +1 more source

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

, 2016
High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities
Sushant Sonde (1571773), Shixuan Yang (1579624), Maruthi N. Yogeesh (1440478), Sandra H. Aldave (1640410), Nanshu Lu (1579660), Deji Akinwande (1424785), Weinan Zhu (1640407), Joon-Seok Kim (1552852), Li Tao (154250)   +8 more
core   +2 more sources

Electrical noise, temperature fluctuations and sensitivity of a vertical TFET based biosensor with dielectric pocket under the influence of interface trap charges

Discover Electronics
This work analyses the sensing properties of a vertical TFET-based biosensor with a dielectric pocket accounting for reliability aspects including interface trap charges (ITCs), steric hindrance, electrical noise and temperature fluctuations.
Debika Das, Lachit Dutta, Ashim Kr. Biswas, Swapna Bharali, Ujjal Chakraborty, Pranjal Borah   +5 more
doaj   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

Advanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami, Koshi Oi, Keisuke Yamada, Jiang Pu, Hao Ou, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu   +7 more
wiley   +1 more source

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

, 2015
We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed.
Xu, Yong, Aparecido-Ferreira, Alex, Lin, Yen-Fu, Sun, Huabin, Li, Song-Lin, Ueno, Keiji, Yamamoto, Mahito, Nakaharai, Shu, Jian, Wen-Bin, Li, Wenwu, Wang, Sheng-Tsung, Tsukagoshi, Kazuhito   +11 more
core   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
wiley   +1 more source

Ambipolar diffusion in weakly ionized plasmas

, 2011
Summary form only given. We study the effect of the ambipolar diffusion (joint transport of magnetic flux and charged particles relative to neutral particles) on the long-term evolution of a magnetic field one dimensional configuration.
Andreas Reisenegger, Reisenegger Von Oepen Tassilo, Andreas, Valdivia, Juan A., Hoyos, Jaime H., Jaime H. Hoyos, Juan A. Valdivia   +5 more
core   +1 more source

Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering

Electronics Letters, 2015
A novel asymmetric isolated gates dopant segregated Schottky barrier MOSFET (AIG DS‐SBMOS) for the suppression of ambipolar leakage current ( I AMB ) using gate engineering is reported.
S. Kale, P.N. Kondekar
openaire   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source