Results 101 to 110 of about 3,294 (243)
Graphene FET circuit-level device modelling
This thesis presents models for a graphene based field effect transistor (GFET). The graphene material has been widely studied since its synthesis in 2004 and the material holds promise for the next generation electronic applications. Therefore, there is
Umoh, Ime J.
core
Plasmakristall‐4 Experiment: 10 Years of Operation in Orbit
ABSTRACT Plasmakristall‐4 (PK‐4) is a microgravity complex plasma laboratory operated for 10 years on board the International Space Station. Its main purpose is the particle‐resolved investigation of generic condensed matter phenomena using strongly coupled suspensions of microparticles immersed in low‐pressure gas‐discharge plasmas.
M. Pustylnik +3 more
wiley +1 more source
A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching.
Chenhe Liu +8 more
doaj +1 more source
Synergistic Optical Strategies for Enhanced Perovskite Photocatalytic Activity
This review addresses bottlenecks of halide perovskites' photoactive components from an optics‐driven perspective and organizes recent advances into four interconnected design principles. This review provides practical design principles and outlines key directions toward efficient, selective, and stable perovskite photocatalysis for CO2 reduction ...
Jaemin Jeong +3 more
wiley +1 more source
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan +8 more
wiley +1 more source
Ambipolar Lifetimes in GaAs/AlGaAs Self Electro-Optic Effect Devices
The forward current-voltage (I-V) characteristics of GaAs/AlGaAs Self Electro-optic Effect Device (SEED) p-i-n diodes were measured. The I-V curves exhibited a diode like behavior with an ideality factor of 2 for voltages in the range 0.5–1.25V.
M. W. Focht +7 more
core +1 more source
The buried interface is a critical determinant of efficiency and stability in inverted flexible perovskite solar cells (IFPSCs). This Perspective summarizes advances in hole transporting materials for IFPSCs, including polymeric, small‐molecule, inorganic, and hybrid systems, and discusses the prospects and feasibility of emerging molecular design and ...
Xianglang Sun, Jiawei Leng, Zhong'an Li
wiley +1 more source
Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon
We report on directly deposited plasma-enhanced chemical vapor deposition (PECVD) nanocrystalline silicon (nc-Si:H) ambipolar thin-film transistors (TFTs) fabricated at 260 °C.
Andrei Sazonov +4 more
core +1 more source
Abstract We report the design and synthesis of a series of bisisoindigo‐based donor–acceptor (D–A) copolymers, P4F18, P4F10, P2F18, and P2F10. By reverse evolution of fluorine substitution and side‐chain structure, we effectively tuned the frontier molecular orbital energy levels, intermolecular interactions, molecular self‐assembly, and thus charge ...
Keli Shi +11 more
wiley +1 more source
Stable Synapse‐Like Memory Switching in N‐Heterocyclic Carbene Monolayers
We report a redox‐active N‐heterocyclic carbene (NHC) monolayer showing synapse‐like behavior via proton‐coupled electron transfer (PCET). These quinone‐functionalized NHCs form dense self‐assembled monolayers and highly stable molecular junctions. Bias‐driven PCET switches quinone/hydroquinone states, producing reversible hysteresis and spike‐timing ...
Ankita Das +11 more
wiley +2 more sources

