Results 71 to 80 of about 7,142,378 (255)

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Bandgap modulated phosphorene based gate drain underlap double-gate TFET

AIP Advances, 2018
In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Md. Abdullah-Al-Kaiser, Dip Joti Paul, Quazi D. M. Khosru   +2 more
doaj   +1 more source

Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap [PDF]

مجله مدل سازی در مهندسی, 2019
Underlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for ...
Ali Naderi, Maryam Ghodrati
doaj   +1 more source

Efficient Hot Carrier Management in Lead Halide Perovskite Micro‐Disks Revealed by Super‐Diffusive Migration

Advanced Science, EarlyView.
Hot‐carrier transport in metal halide perovskites is investigated using spatiotemporally‐resolved photoluminescence microscopy. Mesa‐shaped MAPbBr3 microdisks exhibit anomalous super‐diffusive carrier propagation on nanosecond timescales, driven by hot‐carrier stabilization and strong carrier–phonon coupling.
Nithin Pathoor, Shun Omagari, Martin Vacha   +2 more
wiley   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

Advanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park, Seung Ho Ryu, Min Su Kim, Taek‐Mo Chung, Seong Keun Kim, In‐Hwan Baek, Keun Hyung Lee   +6 more
wiley   +1 more source

The Kon-tiki venture [cartographic material] /

, 1950
Map of the Pacific Ocean showing route of Kon-tiki, Kuro Siwo and North Pacific drift, North and South Equatorial currents, Mexico current, Belt of Counter current, Peru or Humboldt's current, and South Pacific Connecting current.; "Map review no. 107, 3
Bureau of Current Affairs (London, England)
core  

Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism [PDF]

, 2013
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity ...
Roy, V. A. L., Han, Su-Ting, Roy, V.A.L., Sona, Prashant, Sonar, P., Zhou, Ye, Sonar, Prashant, Roy, VAL, Zhou, Y., Han, S. T.   +9 more
core   +2 more sources

Engineering Dirac Cones in Graphene for Efficient Iodide Catalysis: Insights by Nanoscale Electrochemistry

Advanced Science, EarlyView.
Graphene iodide oxidation is regulated by Dirac cone engineering. Electrostatic gating tunes the Fermi level to control local iodide oxidation reaction activity, while magic‐angle twisted bilayer graphene creates flat‐band‐derived interfacial states that promote charge transfer and iodine‐species interaction, revealing a nanoscale route to electronic ...
Yang‐Sheng Lu, Kuo‐En Chang, Ta‐Lei Chou, Aitor Garcia‐Ruiz, Ting‐Han Lin, Yen‐Ting Liu, Akichika Kumatani, Ming‐Hao Liu, Kenji Watanabe, Takashi Taniguchi, Ming‐Wen Chu, Tse‐Ming Chen, Chun‐Wei Chen, Shao‐Sian Li   +13 more
wiley   +1 more source

Ambipolarity suppression in electrically doped tunnel field effect transistor using asymmetric bias in polarity gates

e-Prime: Advances in Electrical Engineering, Electronics and Energy
In this article, we have addressed an important issue called ambipolarity in electrically doped tunnel field effect transistors, which greatly hinders its use in circuit applications.
Akshatha Bhat, Bhaskar Awadhiya, Sameer Yadav, Yashwanth Nanjappa, Abhishek Pahuja, Sachin Agrawal   +5 more
doaj   +1 more source

Surface engineering of reduced graphene oxide for controllable ambipolar flash memories

, 2015
Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design ...
Lee, Chun-Sing, Han, Su-Ting, Roy, V.A.L., Zhou, Li, Zhou, Ye, Sonar, Prashant, Wei, Huaixin, Yan, Yan   +7 more
core   +1 more source