Results 71 to 80 of about 2,236 (212)

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram   +10 more
wiley   +1 more source

Dual‐Layer‐Per‐Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks

open access: yesAdvanced Electronic Materials
A novel dual‐layer‐per‐array (DLPA) operation is proposed and experimentally demonstrated by using ferroelectric tunnel field‐effect transistors (FeTFETs) as synaptic transistors for high‐density and low‐power neuromorphic computing applications for the ...
Jae Seung Woo   +4 more
doaj   +1 more source

Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka   +5 more
wiley   +1 more source

Alcohol‐Adduct Mediated Precursor Stabilization Strategies for Conformal SnO2 Layers in Highly Efficient and Stable Perovskite Solar Modules

open access: yesAdvanced Energy Materials, EarlyView.
An alcohol‐adduct‐mediated strategy is employed to stabilize tin isopropoxide for the formation of a homogeneous double electron transport layer (ETL) incorporating SnO2 nanoparticles (NPs). This double‐ETL exhibits improved optical and charge‐transport properties due to reduced defect density and better energy level alignment, resulting in high ...
You‐Hyun Seo   +10 more
wiley   +1 more source

Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering

open access: yesElectronics Letters, 2015
A novel asymmetric isolated gates dopant segregated Schottky barrier MOSFET (AIG DS‐SBMOS) for the suppression of ambipolar leakage current ( I AMB ) using gate engineering is reported.
S. Kale, P.N. Kondekar
openaire   +1 more source

Donor–Acceptor Covalent Organic Framework Enables Ambipolar Charge Storage in Aluminum‐Ion Energy Storage

open access: yesAdvanced Energy Materials, EarlyView.
A donor–acceptor covalent organic framework is designed as an ambipolar cathode for aluminum‐ion energy storage. The crystalline, microporous architecture enables intrinsic charge transport without conductive additives. Multi‐electron redox activity at donor and acceptor sites supports high capacity, excellent stability, and efficient reversible ...
Cataldo Valentini   +11 more
wiley   +1 more source

Perovskite Photodetectors at the Intelligence Frontier: From Tunable Materials to Adaptive Optoelectronic Systems

open access: yesCarbon Energy, EarlyView.
This comprehensive review presents a progressive roadmap for perovskite vision detectors. Centered on perovskite‐based artificial perception, the graphic illustrates a systematic evolution: starting with fundamental material engineering and device architectures, advancing toward complex functional strategies such as flexible neuromorphic imaging ...
Chenglong Li   +14 more
wiley   +1 more source

Asymmetric Diphosphane Dioxides With A–π–A–π’–D Scaffolds for High‐Purity Deep‐Blue Luminescence

open access: yesChemistry – A European Journal, EarlyView.
Diphosphane dioxide‐based luminophores with donor–π–acceptor– π’–acceptor scaffold enable efficient deep‐blue emission from tunable charge‐transfer states affording high photoluminescence up to 95%. OLEDs reach EQE 4.9%, aided by triplet–triplet annihilation, highlighting a practical route to high‐performance blue emitters.
Eetu Hakkarainen   +10 more
wiley   +1 more source

Photometric Diagnostic of the Sheath Dynamics and Electron Density Trends in Single and Dual Frequency CCRF Argon Plasmas

open access: yesContributions to Plasma Physics, EarlyView.
ABSTRACT A methodological study is presented on a noninvasive photometric diagnostic for determining trends in electron density and sheath dynamics in single (1f) and a dual (2f) radio frequency capacitively coupled (CCRF) argon plasmas. The 1f discharges are operated at 13.56 and 27.12 MHz, respectively, while the 2f discharge is driven by both ...
Daniel Zuhayra   +3 more
wiley   +1 more source

A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

open access: yesIEEE Journal of the Electron Devices Society, 2019
We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching.
Chenhe Liu   +8 more
doaj   +1 more source

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