Results 41 to 50 of about 7,142,378 (255)

Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C [PDF]

, 2012
In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V ...
MARIO MORENO MORENO, Miguel Dominguez, CARLOS ZUÑIGA ISLAS, Wilfrido Calleja Arriaga, Pedro Rosales Quintero, Joel Molina Reyes, ALFONSO TORRES JACOME, FRANCISCO JAVIER DE LA HIDALGA WADE   +7 more
core  

Fullerene‐Mediated Iodine Immobilization at Buried Interfaces in Sn–Pb Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
Indene‐C60 bisadduct (ICBA) accumulates at the buried interface of inverted tin‐lead perovskite solar cells, limiting undesired electron extraction while maintaining efficient hole transport. ICBA simultaneously scavenges molecular iodine, mitigating Sn2+ oxidation and interfacial recombination. This coupled electronic‐chemical regulation delivers 22.7%
Chi‐Jing Huang, Yi‐Sheng Lin, Matyas Daboczi, Yueyao Dong, Anuj Kumar Singh, Luis Lanzetta, Yun‐Shan Li, Chang‐Hao Wang, Huan‐Wei Lin, Wei‐Jia Qiu, Yi‐Ting He, Chun‐Fu Chang, Sanjayan Sathasivam, Derya Baran, Thomas J. Macdonald, Chieh‐Ting Lin   +15 more
wiley   +1 more source

Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

, 2016
Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)­
Xingyun Li, Hui-Xiong Deng, Zhongming Wei (1650643), Xingyun Li (2828711), Le Huang, Zhongming Wei, Jingbo Li, Hui-Xiong Deng (2828708), Xiaoting Wang, Yan Wang (15435), Yongtao Li, Yongtao Li (371642), Yan Wang, Xiaoting Wang (206653), Le Huang (332269), Jingbo Li (124294)   +15 more
core   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted Perylene and Anthracene

Advanced Science, 2023
Emissive organic semiconductors are highly demanding for organic light‐emitting transistors (OLETs) and electrically pumped organic lasers (EPOLs). However, it remains a great challenge to obtain organic semiconductors with high carrier mobility and high
Liangliang Chen, Zhengsheng Qin, Han Huang, Jing Zhang, Zheng Yin, Xiaobo Yu, Xi‐sha Zhang, Cheng Li, Guanxin Zhang, Miaofei Huang, Huanli Dong, Yuanping Yi, Lang Jiang, Hongbing Fu, Deqing Zhang   +14 more
doaj   +1 more source

High‐Efficiency Deep Blue Single‐Gaussian Europium(II) Emitters and Their Emitter‐Host Interactions

Advanced Functional Materials, EarlyView.
Crown‐ether ligands and carborate anions enable vacuum‐processable Eu(II) emitters with efficient single‐Gaussian deep‐blue luminescence. Combined photophysical and computational analyses reveal that excited‐electron confinement and steric shielding of the europium center jointly govern compatibility with OLED host materials, establishing molecular ...
Mahmoud Soleimani, Paulius Imbrasas, Jan‐Michael Mewes, Felix Kaden, Stephanie Anna Buchholtz, Karl Leo, Sebastian Schellhammer, Carsten Rothe, Sebastian Reineke   +8 more
wiley   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials
This study investigates the photoresponse properties of two‐dimensional (2D) tungsten diselenide (WSe2) ambipolar field‐effect transistors (FETs), distinguishing three distinct transport regions based on major charge carrier types: unipolar, saturation ...
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
doaj   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

Advanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto, Javier Zamudio‐García, Abraham Sánchez‐Caballero, David Marrero‐López, Vincenzo Esposito   +4 more
wiley   +1 more source

Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering

Ain Shams Engineering Journal, 2023
In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique.
Mahmoud Ossaimee, Ahmed Salah, Salah H. Gamal, Ahmed Shaker, M.S. Salem   +4 more
doaj   +1 more source

Structure‐Guided Balancing of Ambipolar Transport Enables Symmetric Switching in Heterojunction Bilayer Organic Transistor Inverters

Advanced Functional Materials, EarlyView.
Balancing the spatially separated p‐ and n‐type transport pathways in heterojunction‐bilayer OTFTs enables symmetric inverter switching (VM ≈ 0.5VDD), whereas discrete integration of unipolar OTFTs gives polarity‐dependent and resistive responses. ABSTRACT High inverter performance in ambipolar organic electronics requires balanced channel strengths ...
Sohyun Choi, Young Yong Kim, Ji Ho Youk, Hoichang Yang   +3 more
wiley   +1 more source