Results 21 to 30 of about 3,294 (243)
Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
IEEE Journal of the Electron Devices Society, 2019 Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
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Micromachines, 2023 In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen +7 more
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Tuning the ambipolar behaviour of organic field effect transistors via band engineering
AIP Advances, 2019 We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc).
P. R. Warren +4 more
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A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]
مجله مدل سازی در مهندسیIn this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
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Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET
Alexandria Engineering Journal, 2023 CNTFET device structures are gaining more research interest as conventional FET structures are reaching their scaling limits. One of the most crucial effects that could occur in the fabrication on the nanometer scale is the gate misalignment.
A. Salah +3 more
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Micromachines, 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim +3 more
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Outlook and Emerging Semiconducting Materials for Ambipolar Transistors [PDF]
, 2014 Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on ...
Piliego, Claudia, +8 more
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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
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Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
Micromachines, 2019 Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Hwa Young Gu, Sangwan Kim
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Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
IEEE Journal of the Electron Devices Society, 2014 In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
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