Results 21 to 30 of about 7,142,378 (255)

Charge transport and excited states in organic semiconductors [PDF]

open access: yes, 2011
PhDOrganic semiconductors are of increasing technological interest in applications such as light emitting diodes, field effect transistors, and photovoltaic devices In order to reveal the basic principles behind these organic semiconductors, charge ...
Song, Jingyao
core   +4 more sources

Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductor [PDF]

open access: yes, 2010
Copyright 2010 by the American Physical Society. Article is available at
N. Stingelin   +9 more
core   +1 more source

Ambipolar organic permeable base transistors [PDF]

open access: yes, 2019
Organic transistors with vertical current transport like the Permeable Base Transistor (PBT) show a high performance while allowing for an easy fabrication on the device level.
Fischer, Axel   +3 more
core   +1 more source

Ambipolar Si nanowire field effect transistors for low current and temperature sensing [PDF]

open access: yes2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011
This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and ...
Sacchetto, Davide   +2 more
openaire   +2 more sources

Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement

open access: yesElectronics Letters, 2016
A novel approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work function engineering is used to suppress the ambipolar behaviour individually.
B. Raad   +3 more
doaj   +1 more source

Study of Electrical Performance of Hetero-Dielectric Gate Tunnel Field Effect Transistor (HDG TFET): A Novel Structure for Future Nanotechnology

open access: yesJournal of Engineering Technology and Applied Physics, 2022
Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui   +2 more
doaj   +1 more source

Effect of ambipolar fluxes on nanoparticle charging in low-pressure glow discharges [PDF]

open access: yes, 2005
The effect of ambipolar fluxes on nanoparticle charging in a typical low-pressure parallel-plate glow discharge is considered. It is shown that the equilibrium values of the nanoparticle charge in the plasma bulk and near-electrode areas are strongly ...
Ostrikov, K.
core   +1 more source

The ambipolar filamentation in the warm ionized medium [PDF]

open access: yes, 2004
International Workshop on Magnetic Fields and Star Formation, APR 21-25, 2003, Madrid, SPAINWe present the 2-D, two fluid ( ions + neutrals) numerical simulations that we are carrying out in order to study the ambipolar filamentation process, in which a ...
Gómez De Castro, Ana Inés   +2 more
core   +1 more source

Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide

open access: yesIEEE Journal of the Electron Devices Society, 2019
Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
doaj   +1 more source

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]

open access: yesمجله مدل سازی در مهندسی
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj   +1 more source

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