Results 21 to 30 of about 2,236 (212)

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]

مجله مدل سازی در مهندسی
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj   +1 more source

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines, 2023
In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li   +7 more
doaj   +1 more source

Tuning the ambipolar behaviour of organic field effect transistors via band engineering

AIP Advances, 2019
We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc).
P. R. Warren, J. F. M. Hardigree, A. E. Lauritzen, J. Nelson, M. Riede   +4 more
doaj   +1 more source

Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET

Alexandria Engineering Journal, 2023
CNTFET device structures are gaining more research interest as conventional FET structures are reaching their scaling limits. One of the most crucial effects that could occur in the fabrication on the nanometer scale is the gate misalignment.
A. Salah, M. El Banna, A. Shaker, M. Ossaimee   +3 more
doaj   +1 more source

High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling

Micromachines, 2019
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim, Jaehong Lee, Jang Hyun Kim, Sangwan Kim   +3 more
doaj   +1 more source

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

Micromachines, 2019
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, Byung-Gook Park   +4 more
doaj   +1 more source

Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)

Micromachines, 2019
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Hwa Young Gu, Sangwan Kim
doaj   +1 more source

Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

Nano Letters
26 pages, 4 figures, comments are ...
Bomin Zhang, Xiaoda Liu, Junjie Qi, Ling-Jie Zhou, Deyi Zhuo, Han Tay, Hongtao Rong, Annie G. Wang, Zhiyuan Xi, Chao-Xing Liu, Chui-Zhen Chen, Cui-Zu Chang   +11 more
openaire   +3 more sources

Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

IEEE Journal of the Electron Devices Society, 2014
In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
doaj   +1 more source

The singular behaviour of ambipolar diffusion revealed by 1D Cartesian solutions

Astronomy & Astrophysics
Context. Ambipolar diffusion is increasingly recognised as a key process in the lower solar atmosphere. Its highly non-linear behaviour has many non-intuitive aspects. Aims.
Moreno-Insertis F., Priest E. R., Nóbrega-Siverio D.   +2 more
doaj   +1 more source