Results 11 to 20 of about 2,236 (212)
Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
AIP Advances, 2021 Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications.
Byoung-Seok Lee +6 more
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Nanomaterials, 2022 We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed ...
Ki-Woong Park, Won-Ju Cho
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Silicon Material Based Tunnel FET for Controlling Ambipolar Current
Silicon, 2021 This paper highlights the reduction in ambipolar current by controlling various parameters for gate-drain overlapped structure of nanoscale TFET. In Conventional Tunnel Field Effect Transistor (TFET) the barrier width of tunneling at source-channel and channel-drain region is supervised by voltage at gate.
Shashi Bala +3 more
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Impact of Biosensor Permittivity on a Double-Gate nTFET Ambipolar Current [PDF]
ECS Transactions, 2018 Biosensors are defined as any device that senses and transmits information about a biological element. The importance of biosensors for health and environment monitoring increase in the past decades, due the global warming, pollution and new biological pathogens.
Christian Nemeth Macambira +2 more
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ICTACT Journal on Microelectronics, 2022 This paper proposes and investigates a new architecture of PNPN TFET by using 2-D ATLAS Device Simulation Software TCAD Tool. The source pocket plays a crucial role in increasing the ON-state current through Tunnel FET. In order to enhance the source pocket characteristics, the source pocket is divided laterally into high and low concentration source ...
Sudhan Kumar +5 more
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Electronics Letters, 2016 A novel approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work function engineering is used to suppress the ambipolar behaviour individually.
B. Raad +3 more
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Ambipolar Si nanowire field effect transistors for low current and temperature sensing [PDF]
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011 This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and ...
Sacchetto, Davide +2 more
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Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
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Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
IEEE Journal of the Electron Devices Society, 2019 Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
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