Results 11 to 20 of about 3,294 (243)
Impact of Biosensor Permittivity on a Double-Gate nTFET Ambipolar Current [PDF]
ECS Transactions, 2018 Biosensors are defined as any device that senses and transmits information about a biological element. The importance of biosensors for health and environment monitoring increase in the past decades, due the global warming, pollution and new biological pathogens.
Christian Nemeth Macambira +2 more
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Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
AIP Advances, 2021 Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications.
Byoung-Seok Lee +6 more
doaj +1 more source
MMS Observations of a Compressed Current Sheet: Importance of the Ambipolar Electric Field
Physical Review Letters, 2022 Spacecraft data reveals a nonuniform ambipolar electric field transverse to the magnetic field in a thin magnetotail current sheet that leads to intense ExB velocity shear and non-gyrotropic particle distributions. The ExB drift far exceeds the diamagnetic drift and drives lower hybrid waves localized to the magnetic field reversal region, which is ...
Ami M. DuBois +4 more
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Nanomaterials, 2022 We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed ...
Ki-Woong Park, Won-Ju Cho
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Silicon Material Based Tunnel FET for Controlling Ambipolar Current
Silicon, 2021 This paper highlights the reduction in ambipolar current by controlling various parameters for gate-drain overlapped structure of nanoscale TFET. In Conventional Tunnel Field Effect Transistor (TFET) the barrier width of tunneling at source-channel and channel-drain region is supervised by voltage at gate.
Shashi Bala +3 more
openaire +2 more sources
ICTACT Journal on Microelectronics, 2022 This paper proposes and investigates a new architecture of PNPN TFET by using 2-D ATLAS Device Simulation Software TCAD Tool. The source pocket plays a crucial role in increasing the ON-state current through Tunnel FET. In order to enhance the source pocket characteristics, the source pocket is divided laterally into high and low concentration source ...
Sudhan Kumar +5 more
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Electronics Letters, 2016 A novel approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work function engineering is used to suppress the ambipolar behaviour individually.
B. Raad +3 more
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
doaj +1 more source
Ambipolar light-emitting organic field-effect transistor [PDF]
, 2004 We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N ...
Rost, Constance +6 more
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Microwave Models for Graphene Ambipolar Devices: an Engineering Teaching Perspective [PDF]
, 2022 In this article it iimplemented a set of circuit models to be exploited in conventional circuit simulators used in engineering degrees. The models capture the physics of the graphene-based transistors, characterized by the ambipolar conduction, and its ...
González Marín, Enrique +2 more
core +1 more source