Results 11 to 20 of about 7,142,378 (255)

Damage-Free Passivation of Ambipolar OECTs with Fluoropolymer Film for Enhanced Performance and Stability Toward Reliable Biosignal Processing. [PDF]

open access: yesAdv Sci (Weinh)
A damage‐free iCVD fluoropolymer passivation strategy is introduced for ambipolar vertical OECTs. Vapor‐phase infiltration and thermal annealing induce nanoscale phase separation in the OMIEC channel, enhancing overall device performance. A single‐channel bipolar event‐driven spiking encoder is also demonstrated for electrocardiogram signal encoding ...
Yang J   +7 more
europepmc   +2 more sources

High performance ambipolar organic mixed ionic-electronic conductor for adaptive logic circuits and neuromorphic electronics [PDF]

open access: yes, 2021
Organic mixed ionic-electronic conductors (OMIECs) are central to bioelectronic applications such as biosensors, health monitoring devices and neural interfaces, and have facilitated efficient next-generation brain-inspired computing and biohybrid ...
Jun, Song   +6 more
core   +1 more source

Gate-Tunable Polarity-Reconfigurable Photovoltaic Response With Dual Linearity in NbS<sub>3</sub>/WSe<sub>2</sub> Heterostructures for In-Sensor Image Processing. [PDF]

open access: yesAdv Sci (Weinh)
An NbS3/WSe2 van der Waals heterostructure realizes a continuously gate‐tunable self‐powered photovoltaic response through interfacial band‐alignment modulation and reversible built‐in electric‐field switching. The short‐circuit photocurrent scales linearly with incident power density, while short‐circuit photoresponsivity varies linearly with gate ...
Liu J   +9 more
europepmc   +2 more sources

Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

open access: yesMicromachines, 2023
In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current.
Chan Shan   +4 more
doaj   +1 more source

Simulation of Dual-Material Hetero-Double Gate Tunnel Field Effect Transistor (TFET) in Sub-Micron Region

open access: yesJournal of Engineering Technology and Applied Physics, 2023
To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS<sub>2</sub> Memory Transistor. [PDF]

open access: yesAdv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y   +10 more
europepmc   +2 more sources

Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source

open access: yesAIP Advances, 2021
Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications.
Byoung-Seok Lee   +6 more
doaj   +1 more source

Impact of Biosensor Permittivity on a Double-Gate nTFET Ambipolar Current [PDF]

open access: yesECS Transactions, 2018
Biosensors are defined as any device that senses and transmits information about a biological element. The importance of biosensors for health and environment monitoring increase in the past decades, due the global warming, pollution and new biological pathogens.
Christian Nemeth Macambira   +2 more
openaire   +1 more source

CONTROLLING AMBIPOLAR CURRENT AND ENHANCEMENT OF ON-STATE CURRENT WITH HIGH AND LOW CONCENTRATION SOURCE POCKETS

open access: yesICTACT Journal on Microelectronics, 2022
This paper proposes and investigates a new architecture of PNPN TFET by using 2-D ATLAS Device Simulation Software TCAD Tool. The source pocket plays a crucial role in increasing the ON-state current through Tunnel FET. In order to enhance the source pocket characteristics, the source pocket is divided laterally into high and low concentration source ...
Sudhan Kumar   +5 more
openaire   +1 more source

Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer

open access: yesNanomaterials, 2022
We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed ...
Ki-Woong Park, Won-Ju Cho
doaj   +1 more source

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