Results 61 to 70 of about 2,968 (223)

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

open access: yesAdvanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu   +5 more
wiley   +1 more source

The Impact of Ambipolar Diffusion on the Rossby Wave Instability in a Protoplanetary Disk

open access: yesThe Astrophysical Journal
Recent observational and simulation studies have revealed that ambipolar diffusion is an important phenomenon in the outer regions of a protoplanetary disk (PPD).
Mahmoud Gholipour
doaj   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

open access: yesAdvanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park   +6 more
wiley   +1 more source

An ambipolar transistor based on a monolayer WS2 using lithium ions injection

open access: yesMaterials Research Express, 2020
Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors.
Heshen Wang   +6 more
doaj   +1 more source

Engineering Dirac Cones in Graphene for Efficient Iodide Catalysis: Insights by Nanoscale Electrochemistry

open access: yesAdvanced Science, EarlyView.
Graphene iodide oxidation is regulated by Dirac cone engineering. Electrostatic gating tunes the Fermi level to control local iodide oxidation reaction activity, while magic‐angle twisted bilayer graphene creates flat‐band‐derived interfacial states that promote charge transfer and iodine‐species interaction, revealing a nanoscale route to electronic ...
Yang‐Sheng Lu   +13 more
wiley   +1 more source

The role of ambipolar heating in the energy balance of solar prominences

open access: yesAstronomy & Astrophysics
Solar prominence threads are typically located around magnetic dips, where cold and dense plasma is suspended against gravity in the hot corona due to the upward magnetic force.
Melis Llorenç, Soler Roberto
doaj   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami   +7 more
wiley   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo   +11 more
wiley   +1 more source

Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

open access: yesNanoscale Research Letters, 2019
We investigated the electrical and optoelectronic characteristics of ambipolar WSe2 field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient.
Junseok Seo   +7 more
doaj   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Home - About - Disclaimer - Privacy