Results 41 to 50 of about 2,968 (223)

Ambipolar to anti-ambipolar light-induced transition in WSe ₂ -based FETs

Materials Horizons
Light-induced ambipolar to anti-ambipolar transition in WSe 2 for multilevel logic in compact data processing.
Kimberly Intonti, Adolfo Mazzotti, Aniello Pelella, Filippo Giubileo, Nadia Martucciello, Stephen O’Sullivan, Vilas Patil, Paul K. Hurley, Lida Ansari, Farzan Gity, Antonio Di Bartolomeo   +10 more
openaire   +4 more sources

Confinement‐Induced Donnan Potential Enables Sealed Hydrovoltaic Power From Microliter Water

Advanced Materials, EarlyView.
An ultrathin MXene/cellulose nanofiber (CNF) nanochannel‐based hydrovoltaic generator produces sustained direct current (DC) from a single microliter droplet under sealed operation. Asymmetric nanochannel confinement establishes a persistent ion gradient and a confinement‐induced Donnan potential, harvesting the interfacial free energy released upon ...
Sangyun Na, Geonyoung Jung, Yoojin Chang, Yun Goo Ro, Cheolhong Park, Jeonghee Yeom, Jinyoung Kim, Jeeyoon Kim, Hyejin Lee, Hyeji Oh, Hyunhyub Ko   +10 more
wiley   +1 more source

Breaking Barriers: Centimeter‐Sized Single Layer WSe2 by Gold‐Mediated Exfoliation for Ambipolar Field Effect Transistors at Ultra‐Low Voltages

Advanced Electronic Materials
Transition Metal Dichalcogenides (TMDCs) are promising semiconductor alternatives to silicon in CMOS technology. Their layered nature allows scaling to a single layer (1L) without degrading electrical performance, enabling further miniaturization of ...
Sarah Grützmacher, Wenkai Liu, Max Heyl, Patrick Amsalem, Norbert Koch, Emil J. W. List‐Kratochvil, Giovanni Ligorio   +6 more
doaj   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement

Electronics Letters, 2016
A novel approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work function engineering is used to suppress the ambipolar behaviour individually.
B. Raad, K. Nigam, D. Sharma, P. Kondekar   +3 more
doaj   +1 more source

Understanding Interfacial Photoswitching Mechanisms in Atomically‐Thin TMD‐Spiropyran Hybrids

Advanced Materials Technologies, EarlyView.
Photochromic molecules can effectively modulate the optoelectronic properties of atomically thin transition metal dichalcogenide semiconductors. Spiropyran that switches its chemical configuration upon alternating UV and visible irradiation enables light‐programmable optoelectronic devices.
Sewon Park, Jaehoon Ji, Michael Brophy, John Audi, Jean Rouillon, Carlos Benitez‐Martin, Joakim Andréasson, Jeong Ho You, Jong Hyun Choi   +8 more
wiley   +1 more source

Photodoping in Wide‐Bandgap Perovskite Solar Cells With MXenes

Advanced Optical Materials, EarlyView.
Ultrafast tandem spectroscopy and DFT modeling reveal the separate dynamics and the imbalance of electrons and holes in wide bandgap perovskite solar cells with MXene incorporation. The enhanced photoconversion performances of the devices are traced to photodoping, with selective hole trapping and suppressed recombination of electrons.
Angelica Simbula, Antonio Agresti, Sara Pescetelli, Sofia Sechi, Nicola Sestu, Francesco Mattana, Federico Pitzalis, Riccardo Pau, David Dell'Angelo, Alessio Filippetti, Alessandro Mattoni, Anna Pazniak, Daniela Marongiu, Valeria Demontis, Francesco Quochi, Michele Saba, Andrea Mura, Giovanni Bongiovanni   +17 more
wiley   +1 more source

Thermal Effects of Ambipolar Diffusion during the Gravitational Collapse of a Radiative Cooling Filament

The Astrophysical Journal
In this study, we consider the effects of ambipolar diffusion during the gravitational collapse of a radiative cooling filamentary molecular cloud. Two separate configurations of magnetic field, i.e., axial and toroidal, are considered in the presence of
Mahmoud Gholipour
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Nano-Micro Letters, 2022
Highlights Graphene (Gr)-bridge heterostructure, consisting of a laterally series-connected (cascade) ambipolar/Gr/n-type 2D van der Waals channel materials for ambipolar semiconductor-based high-end application devices was developed.
Minjong Lee, Tae Wook Kim, Chang Yong Park, Kimoon Lee, Takashi Taniguchi, Kenji Watanabe, Min-gu Kim, Do Kyung Hwang, Young Tack Lee   +8 more
doaj   +1 more source