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Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability. [PDF]

open access: yesACS Appl Mater Interfaces
Kim SY   +9 more
europepmc   +1 more source

Crystalline–amorphous and amorphous–amorphous transitions in phase-change materials

Journal of Non-Crystalline Solids, 2009
Abstract The transition from the crystalline state to amorphous state and back has been studied in the particular case of the GeSb2Te4 phase-change material by a computer simulation procedure. Modelling at the nanoscale indicates specific structural characteristics, especially the multiplicity of the amorphous phase as opposite to the uniqueness of ...
M. Popescu   +3 more
openaire   +1 more source

Pressure-induced amorphization and an amorphous–amorphous transition in densified porous silicon

Nature, 2001
Crystalline and amorphous forms of silicon are the principal materials used for solid-state electronics and photovoltaics technologies. Silicon is therefore a well-studied material, although new structures and properties are still being discovered. Compression of bulk silicon, which is tetrahedrally coordinated at atmospheric pressure, results in a ...
S K, Deb   +3 more
openaire   +2 more sources

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