Results 11 to 20 of about 3,089,886 (293)

Automatic design of analogue circuits [PDF]

, 2011
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.Evolvable Hardware (EHW) is a promising area in electronics today.
Sapargaliyev, Yerbol
core   +7 more sources

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

IEEE Access, 2020
A new single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation results of the conventional structure.
Fei Zhang, Ying Wang, Xue Wu, Fei Cao
doaj   +1 more source

Building Blocks for GaN Power Integration

IEEE Access, 2021
GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices.
Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Doring, Patrick Waltereit, Rudiger Quay, Oliver Ambacher   +7 more
doaj   +1 more source

Implementation of a Fractional-Order Electronically Reconfigurable Lung Impedance Emulator of the Human Respiratory Tree

Journal of Low Power Electronics and Applications, 2020
The fractional-order lung impedance model of the human respiratory tree is implemented in this paper, using Operational Transconductance Amplifiers. The employment of such active element offers electronic adjustment of the impedance characteristics in ...
Elpida Kaskouta, Stavroula Kapoulea, Costas Psychalinos, Ahmed S. Elwakil   +3 more
doaj   +1 more source

Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Applied Sciences, 2021
Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency.
Antonio Lopez-Martin, Maria Pilar Garde, Jose M. Algueta-Miguel, Javier Beloso-Legarra, Ramon G. Carvajal, Jaime Ramirez-Angulo   +5 more
doaj   +1 more source

Characterization and Design of Analog Integrated Circuits Exploiting Analog Platforms [PDF]

, 2006
Universal Mobile Telecommunication System (UMTS) front end design is challenging because of the need to optimize power while satisfying a very high dynamic range requirement. At the same time, designing analog circuits for automotive applications is very
Vincis, Federico
core   +1 more source

IEEE Open Journal of Circuits and Systems: Special Section on ISICAS 2022

IEEE Open Journal of Circuits and Systems, 2022
The International Symposium on Integrated Circuits and Systems (ISICAS) is a forum for dissemination of original work with experimental results from integrated circuits and systems in the areas of analog, digital, power, energy, biomedical, sensor ...
Alison Burdett
doaj   +1 more source

A Robust Automated Analog Circuits Classification Involving a Graph Neural Network and a Novel Data Augmentation Strategy

Sensors, 2023
Analog mixed-signal (AMS) verification is one of the essential tasks in the development process of modern systems-on-chip (SoC). Most parts of the AMS verification flow are already automated, except for stimuli generation, which has been performed ...
Ali Deeb, Abdalrahman Ibrahim, Mohamed Salem, Joachim Pichler, Sergii Tkachov, Anjeza Karaj, Fadi Al Machot, Kyamakya Kyandoghere   +7 more
doaj   +1 more source

Double Gate JFET Improved Model for Analog Integrated Circuits

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
A double gate JFETs are often used in analog integrated circuits to provide an extremely low input current and capacitance when the top gate is controlled.
Y. D. Galkin, O. V. Dvornikov, V. A. Tchekhovski   +2 more
doaj   +1 more source

A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

Micromachines
To address the severe gate-induced drain leakage (GIDL) issue in fully depleted germanium-on-insulator (FD-GeOI) multi-subchannel tunneling field-effect transistors (MS TFETs), this paper proposes a stepped gate oxide (SGO) structure.
Rui Chen, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, Huiyong Hu   +6 more
doaj   +1 more source