Results 181 to 190 of about 57,744 (244)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Gastroscope-assisted endoscopic retrograde cholangiopancreatography with duodenal retroversion for management of recurrent biliary stent obstruction in malignant duodenal stricture. [PDF]

Endoscopy
Franchellucci G, De Marco A, Marcozzi G, Spadaccini M, Colombo M, Fugazza A, Repici A.   +6 more
europepmc   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Sağlık Bilimlerinde Süreli Yayıncılık-2008

Bilgi Dünyası, 2009
Remziye Yılmaz
doaj  

The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. [PDF]

Materials (Basel)
Espiari A, Padberg H, Kiehn A, Schnieders K, Zhang J, Mussler G, Wiefels S, Jalil AR, Grützmacher D.   +8 more
europepmc   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Tarım Veteriner ve Biyoloji Bilimleri Süreli Yayıncılık 2. Editörler Çalıştayı-2008

Bilgi Dünyası, 2009
Remziye Yılmaz
doaj  

Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires. [PDF]

Adv Sci (Weinh)
K Sivan A, Forrer N, Shandilya A, Liu Y, Böhler J, Vogel A, Nigro A, Chevalier Kwon P, Efimov A, Golokolenov I, Gadea G, Rurali R, Baumgartner A, Zumbühl DM, Zardo I.   +14 more
europepmc   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Non-invasive measurement of blood pressure and its possible use in future in-depth studies on farrowing-related complications. [PDF]

Porcine Health Manag
Carlertz A, Jacobson M, Hedenqvist P, Rydén A.   +3 more
europepmc   +1 more source