Results 191 to 200 of about 1,569,274 (243)

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

open access: yesAdvanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali   +3 more
wiley   +1 more source

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware. [PDF]

open access: yesNat Commun
Liu L   +16 more
europepmc   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee   +11 more
wiley   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

open access: yesAdvanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad   +4 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing. [PDF]

open access: yesMaterials (Basel), 2018
Wang R   +11 more
europepmc   +1 more source

Low‐Voltage Operation of IGZO Memtransistors Enabled by Coupling Enhancement Through 2T Drain‐Driven Operation for Neuromorphic Computing

open access: yesAdvanced Intelligent Systems, EarlyView.
A two‐terminal IGZO memtransistor enabling low‐voltage operation is demonstrated through coupling enhancement. By utilizing drain‐induced Fowler–Nordheim tunneling, the device achieves programming below 10 V with a large memory window and high on/off ratio.
Junhyeong Park   +5 more
wiley   +1 more source

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