Results 221 to 230 of about 896,336 (313)
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Evidence Against Syntactic Encapsulation in Large Language Models. [PDF]
McGee TA, Zhang Y, Blank IA.
europepmc +1 more source
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong +6 more
wiley +1 more source
Anishinaabe healthy brain aging: traditional knowledge teachings represented in works of art. [PDF]
Jacklin K +7 more
europepmc +1 more source
This work presents a rate‐adaptive site transformation strategy in Ag‑ethylenediamine intercalated Co9S8, which not only enables parallel water dissociation and H* adsorption, but also allows the catalyst to provide more active sites under high demand, removing a major bottleneck. The catalyst achieves a record current density of 4.2 A cm−2@2.0 V, with
Yongqi Ye +3 more
wiley +1 more source
Integrating Art-Based Approaches in Psycho-Oncology Practice: Insights From a Pilot Creative Arts Workshop Designed for Cancer Patients Receiving Psychiatric Care. [PDF]
Rivest J +6 more
europepmc +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source

