Results 41 to 50 of about 8,261 (169)

Scrypt Mining with ASICs

open access: yesCoRR, 2014
Cryptocurrencies have garnered a lot of attention by governments and internet enthusiasts over the past three years. These currencies are celebrated for their security and speedy transactions in a modern era of digital commerce. Bitcoin was the first of these currencies to gain a large advantage over subsequent iterations.
openaire   +2 more sources

EERA-KWS: A 163 TOPS/W Always-on Keyword Spotting Accelerator in 28nm CMOS Using Binary Weight Network and Precision Self-Adaptive Approximate Computing

open access: yesIEEE Access, 2019
This paper proposed an energy-efficient reconfigurable accelerator for keyword spotting (EERA-KWS) based on binary weight network (BWN) and fabricated in 28-nm CMOS technology.
BO Liu   +9 more
doaj   +1 more source

ASIC-Resistance of Multi-Hash Proof-of-Work Mechanisms for Blockchain Consensus Protocols

open access: yesIEEE Access, 2018
Blockchain technology rapidly gained popularity based on its open and decentralized operation. Consensus protocol is the core mechanism of a blockchain network that securely maintains the distributed ledger from possible attacks from adversaries.
Hyungmin Cho
doaj   +1 more source

Development of High-count Rate Multi-channel Time Measurement and Serial Readout Circuit

open access: yesYuanzineng kexue jishu
Advanced front-end readout chips for medium and high energy nuclear physics experiments have shown an increasing trend towards digitization in recent years, increasing system integration and reducing power consumption. Guided by critical scientific goals,
LU Weijian1, 2, 3, QIAN Yi1, 2, 3, , PU Tianlei1, 2, 3, ZHAO Hongyun1, 2, 3, SUN Zhikun1, 2, 3, ZHANG Jiarui1, 3, LIU Zhengqiang1, 3
doaj   +1 more source

A Low-Overhead Timing Monitoring Technique for Variation-Tolerant Near-Threshold Digital Integrated Circuits

open access: yesIEEE Access, 2018
Near-threshold computing brings several times of magnitude improvement in energy efficiency of digital circuits. However, it also introduces several times of deteriorated delay variations caused by process, voltage, and temperature (PVT) variations.
Weiwei Shan   +4 more
doaj   +1 more source

EERA-ASR: An Energy-Efficient Reconfigurable Architecture for Automatic Speech Recognition With Hybrid DNN and Approximate Computing

open access: yesIEEE Access, 2018
This paper proposes a hybrid deep neural network (DNN) for automatic speech recognition and an energy-efficient reconfigurable architecture with approximate computing for accelerating the DNN.
Bo Liu   +5 more
doaj   +1 more source

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

open access: yesNanoscale Research Letters, 2017
The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy
Da-Peng Xu   +9 more
doaj   +1 more source

High Efficiency High Power Density Bidirectional Non-Isolated LLC Converter With Transformer-Coupled Gate Driver for 48 V MHEV

open access: yesIEEE Open Journal of Power Electronics
In this article, a 12-switch non-isolated LLC (NI-LLC) converter is proposed to address the application requirements of 4:1 bidirectional fixed-ratio voltage conversion in 48 V mild hybrid electric vehicles (MHEVs).
Song Ding   +4 more
doaj   +1 more source

An Ultra-Low Power Always-On Keyword Spotting Accelerator Using Quantized Convolutional Neural Network and Voltage-Domain Analog Switching Network-Based Approximate Computing

open access: yesIEEE Access, 2019
An ultra-low power always-on keyword spotting (KWS) accelerator is implemented in 22nm CMOS technology, which is based on an optimized convolutional neural network (CNN).
Bo Liu   +8 more
doaj   +1 more source

Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

open access: yesAdvances in Condensed Matter Physics, 2015
The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and high k gate oxide HfO2 layer have been investigated in detail.
C. H. Yu   +4 more
doaj   +1 more source

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