Results 131 to 140 of about 3,036 (288)

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Advanced far infrared detectors [PDF]

, 1993
Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > {lambda} > 50 {mu}m are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ...
Haller, E. E.
core  

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge)

Advanced Electronic Materials, EarlyView.
Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Michał J. Winiarski, Tomasz Klimczuk, Allana G. Iwanicki, Satya K. Kushwaha, Martin Mourigal, Tyrel M. McQueen, Thao T. Tran   +9 more
wiley   +1 more source

Background experiment of the low energy x-ray telescope detectors on insight-HXMT

AIP Advances
The low energy x-ray telescope (LE) is one of the main instruments of the insight-hard x-ray modulation telescope, the first x-ray astronomical satellite of China.
Wei Li, Jingbin Lu, Yanji Yang, Yifan Zhang, Weiwei Cui, Juan Wang, Yong Chen   +6 more
doaj   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
wiley   +1 more source

High-efficiency and Low-noise Detectors for the Upgraded CLASS 90 GHz Focal Plane

The Astrophysical Journal Supplement Series
We present the in-lab and on-sky performance for the upgraded 90 GHz focal plane of the Cosmology Large Angular Scale Surveyor, which had four of its seven detector wafers updated during the austral winter of 2022.
Carolina Núñez, John W. Appel, Rahul Datta, Charles L. Bennett, Michael K. Brewer, Sarah Marie Bruno, Ricardo Bustos, David T. Chuss, Nicholas Costen, Jullianna Denes Couto, Sumit Dahal, Kevin L. Denis, Joseph R. Eimer, Thomas Essinger-Hileman, Jeffrey Iuliano, Yunyang Li, Tobias A. Marriage, Jennette Mateo, Matthew A. Petroff, Rui Shi, Karwan Rostem, Deniz A. N. Valle, Duncan Watts, Edward J. Wollack, Lingzhen Zeng   +24 more
doaj   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

Advanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith, Ryan D. McKenzie, Alban Joseph, Robert L. Stamps, Rair Macêdo   +4 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Long wavelength photoconductive detectors for airborne and orbital infrared astronomy [PDF]

, 1983
Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted in integrating cavities. In addition, a cold preamplifier package consisting of J230 junction field effect transistors (JFETs) was produced. Tests of the
Houck, J. R.
core   +1 more source

Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene

Advanced Electronic Materials, EarlyView.
The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones, Youngju Park, Paulina Majchrzak, Kimberly Hsieh, Chakradhar Sahoo, Thomas S. Nielsen, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Yong P. Chen, Jeil Jung, Søren Ulstrup   +13 more
wiley   +1 more source