Results 261 to 270 of about 6,243,018 (311)

Total atomic photoelectric cross-sections

Il Nuovo Cimento B Series 10, 1969
Total atomic photoelectric cross-sections have been obtained by the subtraction technique for the elements Cu, Mo, Ag, Sn, W, Au, Pb and U in the energy region 20 to 1330 keV; and compared with the tabulated theoretical predictions of Schmickley and Pratt. It has been found that, in general, there is satisfactory agreement between the two.
K. Parthasaradhi, S. Ramamurty
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Photoionization cross-sections for atomic oxygen

Planetary and Space Science, 1992
Abstract The R-matrix method is used to obtain cross-sections for the photoionization of atomic oxygen from the 2s22p43P state of O to the 2s22p34So, 2Do, 2Po and 2s2p44P, 2P states of O+. Ea for the 4So and the 2Do O+ states are shown to be reliable but the present results reveal considerable discrepancies for the other final ion states, in ...
K.L. Bell, R.P. Stafford
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Rydberg-atom-Rydberg-atom ionisation cross sections

Journal of Physics B: Atomic and Molecular Physics, 1979
A four-body classical-trajectory Monte Carlo method has been applied to Rydberg-atom-Rydberg-atom scattering problems. Numerical calculations were conducted over the velocity range ve/3 to 3v2 where v2(au)=1/n and n is the principal quantum number of the Rydberg atom.
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Aggregates of atoms and their stopping cross sections

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
Abstract The problem of deriving universal atomic stopping cross sections from measurements performed in real physical targets is discussed with regard to the influence of the bonds on the stopping cross sections, which exists whenever atoms join to form molecules or a solid. This influence has to be considered for all investigated substances, except
Wolfgang Neuwirth, Georg Both
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Atomic Photoionization Cross Sections

1978
In these lectures I will discuss various methods of calculating atomic photoionization cross sections with emphasis on resonant structures. I will attempt to order the methods according to the complexity of the problem that they can be used on. Thus the Feshbach projection operator formalism, which is most applicable to the calculation of resonance ...
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Photoionization cross sections for atomic oxygen

Planetary and Space Science, 1967
Abstract Photoionization cross sections for ground state atomic oxygen are presented for wavelengths longer than 25 A. Multi-channel expressions, in the dipole approximation, are used to calculate cross sections for the ejection of an outer subshell electron.
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Cross-section measurements for electron-impact ionization of atoms

Physical Review A, 1990
Absolute electron-impact cross sections have been measured from 0 to 200 eV for single ionization of 16 atoms (Mg, Fe, Cu, Ag, Al, Si, Ge, Sn, Pb, P, As, Sb, Bi, S, Se, and Te) with an estimated accuracy of \ifmmode\pm\else\textpm\fi{}10%. Combined with our recent measurements of He, Ne, Ar, Kr, Xe, F, Cl, Br, I, Ga, and In [Wetzel et al., Phys. Rev. A
, Freund, , Wetzel, , Shul, , Hayes
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Photoionisation cross section of atomic oxygen

Journal of Physics B: Atomic and Molecular Physics, 1978
The photoionisation cross section for the ground state 2s22p4 3P of O I is calculated in the close-coupling approximation employing the frozen-cores model. Results include detailed resonance analysis using accurate interpolation and extrapolation procedures.
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Cross-sectional atomic force microscopy of semiconductor nanostructures

Journal of Applied Physics, 1995
We performed imaging of semiconductor nanostructures (quantum wells and quantum wires) by atomic force microscopy of the cleaved edge of the samples under ambient conditions. Selective etching was used to enhance the composition contrast of the semiconductor heterostructure layers, and a procedure for retrieving the nanostructure dimensions from the ...
Dwir, B., Reinhardt, F., Kapon, E.
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Cross-sectional atomic force imaging of semiconductor heterostructures

Materials Science and Engineering: B, 1996
Abstract We performed imaging of semiconductor heterostructures, in particular GaAs-AlGaAs quantum wells and quantum wires, by atomic force microscopy (AFM) of the cleaved edge of the samples. We used two methods to transform the alloy composition into height differences, measurable by AFM: natural oxidation and selective etching.
B Dwir, F Reinhardt, G Biasiol, E Kapon
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