Results 151 to 160 of about 2,052 (205)

2D Co‐Assembly of Solid Acids Enables Stable Superprotonic Conduction Above 260°C

Advanced Functional Materials, EarlyView.
A two‐dimensional co‐assembly strategy integrates antimony phosphate and phosphotungstic acid nanosheets into free‐standing inorganic lamellar membranes with confined acid–acid interfaces. The resulting interfacial hydrogen‐bond network enables anhydrous proton conductivity exceeding 0.1 S cm−1 at 260°C and supports stable high‐temperature fuel‐cell ...
Qiuning Li, Kaiqiang He, Dehua Dong, Fanmengjing Wang, Xiangcheng Liu, Zhikao Li, Jacek J. Jasieniak, Paul A. Webley, Huanting Wang   +8 more
wiley   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

Advanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Kaito Kanahashi, Tomoaki Kameda, Katsunori Wakabayashi, Redhwan A Moqbel, Ting‐Hsuan Wu, Kung‐Hsuan Lin, Yosuke Ogawa, Eiji Nishibori, Keisuke Shinokita, Kazunari Matsuda, Jui‐Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio   +17 more
wiley   +1 more source

Chitin‐Derived Carbon‐Metal Functional Materials

Advanced Functional Materials, EarlyView.
Functional carbon materials are synthesized from combination of biopolymer (chitin) and iron precursors. The resultant material exhibits superior surface area and adsorptive properties compared to carbon materials synthesized directly from pure chitin.
Herry Fang, Chao Hsuan (Joseph) Sung, Haitao Yu, Ezra Sarmiento, Katarina Kotanchek, Ryan Christopher Lee, Michelle Chan, David Kisailus   +7 more
wiley   +1 more source

Atomic Layer Deposition of ScF3 and ScxAlyFz Thin Films

ACS Omega
Elisa Atosuo, Mikko J. Heikkilä, Johanna Majlund, Leevi Pesonen, Miia Mäntymäki, Kenichiro Mizohata, Markku Leskelä, Mikko Ritala   +7 more
doaj   +1 more source

Direct Integration of Conductive, Emissive Perovskite Nanocrystals Into Efficient Light‐Emitting Diodes Without Post‐Synthetic Ligand Exchange

Advanced Functional Materials, EarlyView.
We demonstrate the direct integration of CsPbBr3 perovskite nanocrystals (PNCs) into optoelectronic devices without post‐synthetic ligand exchange. This is achieved by synthesizing PNCs stabilized by strong‐binding‐energy oleylammonium–bromide pairs instead of oleate ligands. The resultant low ligand density and minimized surface defects enhance charge
Jigeon Kim, Yubin Lee, Gyeong Eun Seok, Dong Gyu Lee, Seongwon Lee, Huieun Kim, Sung Woo Jang, Wooyeon Kim, Wondo Choi, Woo Hyeon Jeong, Donghun Lee, Min Jae Ko, Won Bin Im, Jinhan Cho, Tae Kyung Lee, Bo Ram Lee, Younghoon Kim   +16 more
wiley   +1 more source

Fullerene‐Mediated Iodine Immobilization at Buried Interfaces in Sn–Pb Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
Indene‐C60 bisadduct (ICBA) accumulates at the buried interface of inverted tin‐lead perovskite solar cells, limiting undesired electron extraction while maintaining efficient hole transport. ICBA simultaneously scavenges molecular iodine, mitigating Sn2+ oxidation and interfacial recombination. This coupled electronic‐chemical regulation delivers 22.7%
Chi‐Jing Huang, Yi‐Sheng Lin, Matyas Daboczi, Yueyao Dong, Anuj Kumar Singh, Luis Lanzetta, Yun‐Shan Li, Chang‐Hao Wang, Huan‐Wei Lin, Wei‐Jia Qiu, Yi‐Ting He, Chun‐Fu Chang, Sanjayan Sathasivam, Derya Baran, Thomas J. Macdonald, Chieh‐Ting Lin   +15 more
wiley   +1 more source

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride

ACS Omega
Bernhard Y. van der Wel, Kees van der Zouw, Antonius A.I. Aarnink, Alexey Y. Kovalgin   +3 more
doaj   +1 more source

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Atomic layer deposition

Semiconductor Science and Technology, 2012
The growth method of atomic layer deposition (ALD) was introduced in Finland by Suntola under the name of atomic layer epitaxy (ALE). The method was originally used for deposition of thin films of sulphides (ZnS, CaS, SrS) activated with manganese or rare-earth ions.
Antonio Aliano, Giancarlo Cicero, Hossein Nili, Nicolas G. Green, Pablo García-Sánchez, Antonio Ramos, Andreas Lenshof, Thomas Laurell, Aisha Qi, Peggy Chan, Leslie Yeo, James Friend, Mikael Evander, Thomas Laurell, Andreas Lenshof, Thomas Laurell, Jian Chen, Jean Christophe Lacroix, Pascal Martin, Hyacinthe Randriamahazaka, W. Jon. P. Barnes, Bart W. Hoogenboom, Kenji Fukuzawa, Hendrik Hölscher, Hendrik Hölscher, Alessia Bottos, Elena Astanina, Luca Primo, Federico Bussolino, Xuefeng Gao, Vinh-Nguyen Phan, Nam-Trung Nguyen, Chun Yang, Patrick Abgrall, Friedrich G. Barth, Pablo Gurman, Yitzhak Rosen, Orlando Auciello, C. J. Kähler, C. Cierpka, M. Rossi, Bharat Bhushan, Manuel L. B. Palacio, Charles L. Dezelah   +43 more
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Atomic Layer Deposition

2015
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-phase deposition technique for preparing ultra-thin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend in the miniaturization of electronic devices. In addition, many other innovative technologies are
Knoops, H.C.M., Potts, S.E., Bol, A.A., Kessels, W.M.M.   +3 more
openaire   +2 more sources

Atomic Layer Deposition

JOT Journal für Oberflächentechnik, 2011
A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises
Bernd Szyszka, Hugo Tholense
openaire   +2 more sources