Results 1 to 10 of about 211 (69)
Molecules, 2022 Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren +8 more
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Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching
Nanomaterials, 2022 The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques.
William Chiappim +9 more
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Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Crystals, 2021 In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang +3 more
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Nanomaterials, 2023 Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong +6 more
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Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection
Journal of Electronic Science and Technology, 2022 Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan +11 more
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Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition
Materials Research Express, 2022 State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies.
S O’Donnell +9 more
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Data in Brief, 2020 A dataset in this report is regarding an article “Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells” [1].
Woo-Jae Lee +4 more
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Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
Crystals, 2022 Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber +5 more
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Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays
Nanomaterials, 2022 The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak +6 more
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Micromachines, 2023 This study demonstrates the low-temperature (
Shih-Chin Lin +5 more
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