Results 11 to 20 of about 5,812,653 (293)

Plasma enhanced atomic layer deposition on powders [PDF]

ECS Transactions, 2014
During the last decades atomic layer deposition (ALD) gained a lot of interest for coating three dimensional structures with ultrathin conformal films.
Detavernier, Christophe, Rampelberg, Geert, Deduytsche, Davy, Longrie, Delphine   +3 more
core   +5 more sources

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2021
International audienceIn this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5.
Rémy Gassilloud, Vallée, Christophe, Nicolas Possémé, Yeghoyan, Taguhi, Gassilloud, Rémy, Lefèvre, Gauthier, Moustapha Jaffal, Marceline Bonvalot, Christophe Vallée, Gauthier Lefèvre, Jaffal, Moustapha, Bonvalot, Marceline, Possémé, Nicolas, Taguhi Yeghoyan   +13 more
core   +4 more sources

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +2 more sources

Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel), 2019
Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation using molecular dynamics.
Becker M, Sierka M.
europepmc   +4 more sources

Production of carbon nanotubes by PECVD and their applications to supercapacitors [PDF]

, 2010
Màster en Nanociència i NanotecnologiaPlasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically dense-aligned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD).
Caglar, Burak
core   +6 more sources

Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching

Nanomaterials, 2022
The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques.
William Chiappim, Benedito Botan Neto, Michaela Shiotani, Júlia Karnopp, Luan Gonçalves, João Pedro Chaves, Argemiro da Silva Sobrinho, Joaquim Pratas Leitão, Mariana Fraga, Rodrigo Pessoa   +9 more
doaj   +1 more source

Self-limiting Nitrogen/Hydrogen Plasma Radical Chemistry in Plasma-Enhanced Atomic Layer Deposition of Cobalt [PDF]

, 2021
Cobalt (Co) is a potential candidate in replacing copper for interconnects and has been applied in the trenches in semiconductor industry over twenty years.
Ji, Liu, Michael, Nolan, David Wei, Zhang, Hongliang, Lu   +3 more
core   +1 more source

Plasma-Enhanced Molecular Layer Deposition of Phosphane-ene Polymer Films [PDF]

, 2022
A vapour phase molecular layer deposition (MLD) process generating phosphorus-rich phosphane-ene polymer networks was adapted from known solution phase methods and successfully used in a commercial atomic layer deposition tool.
Christine, McGuiness, Floryan, Decampo, Eden, Goodwin, Paul, Ragogna, Peter, Gordon, Justin, Lomax, Sean, Barry   +6 more
core   +1 more source

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo   +3 more
doaj   +1 more source

Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Nanomaterials, 2023
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee   +6 more
doaj   +1 more source