Results 11 to 20 of about 23,511 (291)

Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films [PDF]

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2018
Niobium pentoxide was deposited using tBuN=Nb(NEt2)3 as niobium precursor by both thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PE-ALD) with H2O and O2 plasma as coreactants, respectively.
Saravana Balaji Basuvalingam, Bart Macco, Harm C M Knoops   +2 more
exaly   +2 more sources

Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition [PDF]

Nanoscale Research Letters, 2017
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD).
B. B. Wu, H. M. Zheng, Y. Q. Ding, W. J. Liu, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, S. J. Ding, David W. Zhang   +9 more
doaj   +2 more sources

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +2 more sources

Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO₂ Coating [PDF]

Micromachines, 2021
The chemical, structural, morphological, and optical properties of Al-doped TiO2 thin films, called TiO2/Al2O3 nanolaminates, grown by plasma-enhanced atomic layer deposition (PEALD) on p-type Si and commercial SLG glass were discussed.
William Chiappim, Giorgio Testoni, Felipe Miranda, Mariana Fraga, Humber Furlan, David Ardiles Saravia, Argemiro da Silva Sobrinho, Gilberto Petraconi, Homero Maciel, Rodrigo Pessoa   +9 more
doaj   +2 more sources

Plasma-enhanced atomic layer deposition of vanadium nitride

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2019
This work describes process development and associated characterization of a plasma-enhanced atomic layer deposition process for vanadium nitride (VN) using tetrakis(dimethylamido)vanadium and nitrogen plasma over a deposition temperature range from 150 to 300 °C.
Alexander C Kozen, Mark J Sowa, Nicholas C Strandwitz   +2 more
exaly   +2 more sources

Plasma-enhanced atomic layer deposition of titanium vanadium nitride [PDF]

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2018
The authors have studied the plasma-enhanced atomic layer deposition of TixV1−xN using tetrakis(dimethylamido) titanium, tetrakis(dimethylamido) vanadium, and nitrogen plasma. Through modification of the ratio of TiN to VN deposition cycles, the value of x can be well controlled.
Mark J Sowa, Alexander C Kozen, Nicholas C Strandwitz   +2 more
exaly   +2 more sources

Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition [PDF]

Nanoscale Research Letters, 2017
Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated
Xi-Rui Zhao, Yan-Qiang Cao, Jun Chen, Lin Zhu, Xu Qian, Ai-Dong Li, Di Wu   +6 more
doaj   +2 more sources

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor [PDF]

Nanoscale Research Letters, 2019
For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta.
Bao Zhu, Zi-Jun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding   +5 more
doaj   +2 more sources

Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010
Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3or H2plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3plasma showed higher growth rate, lower resistivity, and lower C content than that using H2plasma.
Lee, HBR, Bang, SH, Kim, WH, Gu, GH, Lee, YK, Chung, TM, Kim, CG, Park, CG, Kim, H   +8 more
openaire   +3 more sources

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition [PDF]

Nanoscale Research Letters, 2017
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 ...
An-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, Erik Østreng, Yung-Sheng Fang, Xiao-Peng Wu, Bo-Wei Wu, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Chun-Yen Chang, Hao-Chung Kuo   +11 more
doaj   +2 more sources