Results 31 to 40 of about 96,299 (290)

Plasma-enhanced atomic layer deposition of Zn-doped GaP

Journal of Physics: Conference Series, 2021
Abstract The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES).
A V Uvarov, A S Gudovskikh, A I Baranov, I A Morozov, D A Kudryashov   +4 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material [PDF]

, 2017
Vanadium phosphate films were deposited by a new process consisting of sequential exposures to trimethyl phosphate (TMP) plasma, O2 plasma, and either vanadium oxytriisopropoxide [VTIP, OV(O-i-Pr)3] or tetrakisethylmethylamido vanadium [TEMAV, V(NEtMe)4]
Detavernier, Christophe, Dobbelaere, Thomas, Mattelaer, Felix, Vereecken, Philippe M   +3 more
core   +1 more source

Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]

AIP Advances
In this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang, Yu-Min Zhang, Liang Wang, Xin-Yu Hao, Ke Xu   +4 more
doaj   +1 more source

An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique

Frontiers in Mechanical Engineering, 2020
In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim, Mariana Amorim Fraga, Homero Santiago Maciel, Homero Santiago Maciel, Rodrigo Sávio Pessoa, Rodrigo Sávio Pessoa   +5 more
doaj   +1 more source

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition [PDF]

, 2012
Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 °C and effective passivation is still achieved. Samples passivated
Bosund, M., Huhtio, T., Lipsanen, Harri, Mattila, P., Sopanen, Markku   +4 more
core   +1 more source

Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al₂O₃ Film Growth

Nanomaterials, 2023
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves, William Chiappim, Júlia Karnopp, Benedito Neto, Douglas Leite, Argemiro da Silva Sobrinho, Rodrigo Pessoa   +6 more
doaj   +1 more source

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology

Nanomaterials, 2021
With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie, Hongwu Bai, Guanghui Miao, Guobao Feng, Jing Yang, Yun He, Xiaojun Li, Yun Li   +7 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition of vanadium nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2019
This work describes process development and associated characterization of a plasma-enhanced atomic layer deposition process for vanadium nitride (VN) using tetrakis(dimethylamido)vanadium and nitrogen plasma over a deposition temperature range from 150 to 300 °C.
Alexander C. Kozen, Mark J. Sowa, Ling Ju, Nicholas C. Strandwitz, Guosong Zeng, Tomas F. Babuska, Zakaria Hsain, Brandon A. Krick   +7 more
openaire   +1 more source

Bifunctional earth-abundant phosphate/phosphide catalysts prepared via atomic layer deposition for electrocatalytic water splitting [PDF]

, 2019
The development of active and stable earth-abundant catalysts for hydrogen and oxygen evolution is one of the requirements for successful production of solar fuels.
Dendooven, Jolien, Detavernier, Christophe, Dobbelaere, Thomas, Henderick, Lowie, Martens, Johan A, Minjauw, Matthias, Rongé, Jan, Sree, Sreeprasanth Pulinthanathu   +7 more
core   +2 more sources

Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals, 2020
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a ...
Alberto Perrotta, Julian Pilz, Roland Resel, Oliver Werzer, Anna Maria Coclite   +4 more
doaj   +1 more source