Results 31 to 40 of about 17,992 (248)
Journal of Materials Research and Technology, 2023 Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition.
Xiao-Ying Zhang +12 more
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The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Nanomaterials, 2021 With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie +7 more
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Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide [PDF]
Coatings, 2021 The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit ...
Pavel Fedorov +7 more
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Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD
Crystals, 2023 Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu +4 more
doaj +1 more source
Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors
IEEE Journal of the Electron Devices SocietyThe use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park +13 more
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Plasma-enhanced atomic layer deposition of vanadium nitride
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2019 This work describes process development and associated characterization of a plasma-enhanced atomic layer deposition process for vanadium nitride (VN) using tetrakis(dimethylamido)vanadium and nitrogen plasma over a deposition temperature range from 150 to 300 °C.
Alexander C. Kozen +7 more
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Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature [PDF]
ACS Applied Materials & Interfaces, 2019 A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the ...
Michiel Van Daele +11 more
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MATEC Web of Conferences, 2016 This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
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Plasma-enhanced atomic layer deposition of titanium vanadium nitride [PDF]
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2018 The authors have studied the plasma-enhanced atomic layer deposition of TixV1−xN using tetrakis(dimethylamido) titanium, tetrakis(dimethylamido) vanadium, and nitrogen plasma. Through modification of the ratio of TiN to VN deposition cycles, the value of x can be well controlled.
Mark J. Sowa +7 more
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Protocol for quantifying miRNA trafficking across the endosomal membrane
FEBS Open Bio, EarlyView.An in vitro protocol measures miRNA uptake into endosomes isolated from mammalian cell extracts, which are free of subcellular contaminants. Performed at 37 °C in the presence of ATP, it ensures the import of single‐stranded miRNA into the endosomal lumen.
Syamantak Ghosh +2 more
wiley +1 more source