Results 31 to 40 of about 23,511 (291)
Plasma-Enhanced Molecular Layer Deposition of Phosphane-ene Polymer Films
A vapour phase molecular layer deposition (MLD) process generating phosphorus-rich phosphane-ene polymer networks was adapted from known solution phase methods and successfully used in a commercial atomic layer deposition tool.
Christine, McGuiness +6 more
core +1 more source
This study demonstrates the low-temperature (
Shih-Chin Lin +5 more
doaj +1 more source
Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide [PDF]
The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit ...
Pavel Fedorov +7 more
openaire +1 more source
Atomic layer deposition (ALD) on polymer substrates often requires a modification of the polymer surface properties. Plasma-enhanced ALD (PE-ALD) process is capable of establishing improved coating/substrate adhesion and layer properties by a plasma pre ...
Réka Lilla Kovács +8 more
doaj +1 more source
Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films [PDF]
Abstract not Available.
Ozgit-Akgun, Çağla +2 more
openaire +2 more sources
Plasma-enhanced atomic layer deposition for plasmonic TiN (Erratum) [PDF]
Publisher’s Note: This paper, originally published on 3 October 2016, was replaced with a corrected version on 12 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.
Lauren M. Otto +7 more
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Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]
In this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang +4 more
doaj +1 more source
In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim +5 more
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Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films [PDF]
Many reported atomic layer deposition (ALD) processes are carried out at elevated temperatures (>150°C), which can be problematic for temperature-sensitive substrates.
Sanden, MCM Richard van de +11 more
core +1 more source
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves +6 more
doaj +1 more source

