Results 21 to 30 of about 23,511 (291)

Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe2) Thin Films for Nanoelectronics [PDF]

ACS Omega
Fabian Sanchez, Ibraheem Giwa, Baraka Chimba, Edward Xiao, Kim Kisslinger, Dmytro Nykypanchuk, Xiao Tong, Fernando Camino, Rebhadevi Monikandan, Zhigang Xiao   +9 more
doaj   +2 more sources

Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching

Nanomaterials, 2022
The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques.
William Chiappim, Benedito Botan Neto, Michaela Shiotani, Júlia Karnopp, Luan Gonçalves, João Pedro Chaves, Argemiro da Silva Sobrinho, Joaquim Pratas Leitão, Mariana Fraga, Rodrigo Pessoa   +9 more
doaj   +1 more source

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo   +3 more
doaj   +1 more source

Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Nanomaterials, 2023
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee   +6 more
doaj   +1 more source

Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition

Materials Research Express, 2022
State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies.
S O’Donnell, M Snelgrove, K Shiel, C Weiland, G Hughes, J Woicik, D O’Neill, F Jose, C McFeely, R O’Connor   +9 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection

Journal of Electronic Science and Technology, 2022
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 ​nm–280 ​nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, Nadiia Pastukhova, Matjaz Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng, Qiang Zhou, Yan-Bo Li   +11 more
doaj   +1 more source

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Crystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel   +5 more
doaj   +1 more source

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Molecules, 2022
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
doaj   +1 more source

Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays

Nanomaterials, 2022
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak, Leonid A. Filatov, Ilya S. Ezhov, Anatoly G. Kolosko, Sergey V. Filippov, Eugeni O. Popov, Maxim Yu. Maximov   +6 more
doaj   +1 more source

Self-limiting Nitrogen/Hydrogen Plasma Radical Chemistry in Plasma-Enhanced Atomic Layer Deposition of Cobalt

, 2021
Cobalt (Co) is a potential candidate in replacing copper for interconnects and has been applied in the trenches in semiconductor industry over twenty years.
Ji, Liu, Michael, Nolan, David Wei, Zhang, Hongliang, Lu   +3 more
core   +1 more source