Results 21 to 30 of about 17,992 (248)

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC [PDF]

Nanomaterials
An Al2O3/AlN stack deposited via Atomic Layer Deposition (ALD) methods as a gate insulator for silicon carbide (4H-SiC) has been investigated, focusing on the effects of different Al2O3 deposition processes on the nitride layer. In particular, dielectric
Bruno Galizia, Emanuela Schilirò, Patrick Fiorenza, Filippo Giannazzo, Bela Pecz, Zsolt Fogarassy, Fabrizio Roccaforte, Raffaella Lo Nigro   +7 more
doaj   +2 more sources

Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe2) Thin Films for Nanoelectronics [PDF]

ACS Omega
Fabian Sanchez, Ibraheem Giwa, Baraka Chimba, Edward Xiao, Kim Kisslinger, Dmytro Nykypanchuk, Xiao Tong, Fernando Camino, Rebhadevi Monikandan, Zhigang Xiao   +9 more
doaj   +2 more sources

Surface characterization of plasma-modified low density polyethylene by attenuated total reflectance fourier-transform infrared (ATR-FTIR) spectroscopy combined with chemometrics

Polymer Testing, 2021
Atomic layer deposition (ALD) on polymer substrates often requires a modification of the polymer surface properties. Plasma-enhanced ALD (PE-ALD) process is capable of establishing improved coating/substrate adhesion and layer properties by a plasma pre ...
Réka Lilla Kovács, Máté Csontos, Szilvia Gyöngyösi, János Elek, Bence Parditka, György Deák, Ákos Kuki, Sándor Kéki, Zoltán Erdélyi   +8 more
doaj   +1 more source

Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]

AIP Advances
In this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang, Yu-Min Zhang, Liang Wang, Xin-Yu Hao, Ke Xu   +4 more
doaj   +1 more source

An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique

Frontiers in Mechanical Engineering, 2020
In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim, Mariana Amorim Fraga, Homero Santiago Maciel, Homero Santiago Maciel, Rodrigo Sávio Pessoa, Rodrigo Sávio Pessoa   +5 more
doaj   +1 more source

Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films [PDF]

ECS Meeting Abstracts, 2013
Abstract not Available.
Ozgit-Akgun, Çağla, Dönmez İnci, Bıyıklı, Necmi   +2 more
openaire   +2 more sources

Plasma-enhanced atomic layer deposition for plasmonic TiN (Erratum) [PDF]

Nanophotonic Materials XIII, 2020
Publisher’s Note: This paper, originally published on 3 October 2016, was replaced with a corrected version on 12 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.
Lauren M. Otto, Aeron T. Hammack, Shaul Aloni, D. Frank Ogletree, Deirdre L. Olynick, Scott D. Dhuey, Bethanie J. H. Stadler, Adam M. Schwartzberg   +7 more
openaire   +1 more source

Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al₂O₃ Film Growth

Nanomaterials, 2023
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves, William Chiappim, Júlia Karnopp, Benedito Neto, Douglas Leite, Argemiro da Silva Sobrinho, Rodrigo Pessoa   +6 more
doaj   +1 more source

Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals, 2020
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a ...
Alberto Perrotta, Julian Pilz, Roland Resel, Oliver Werzer, Anna Maria Coclite   +4 more
doaj   +1 more source

Plasma Enhanced Atomic Layer Deposition of Iridium Oxide for Application in Miniaturized Neural Implants

Current Directions in Biomedical Engineering, 2021
High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical ...
Simon Nicolai, Asplund Maria, Stieglitz Thomas, Bucher Volker   +3 more
doaj   +1 more source