Results 21 to 30 of about 5,812,653 (293)

Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection

Journal of Electronic Science and Technology, 2022
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 ​nm–280 ​nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, Nadiia Pastukhova, Matjaz Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng, Qiang Zhou, Yan-Bo Li   +11 more
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Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition

Materials Research Express, 2022
State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies.
S O’Donnell, M Snelgrove, K Shiel, C Weiland, G Hughes, J Woicik, D O’Neill, F Jose, C McFeely, R O’Connor   +9 more
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Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Molecules, 2022
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
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Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Crystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel   +5 more
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Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays

Nanomaterials, 2022
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak, Leonid A. Filatov, Ilya S. Ezhov, Anatoly G. Kolosko, Sergey V. Filippov, Eugeni O. Popov, Maxim Yu. Maximov   +6 more
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Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

Micromachines, 2023
This study demonstrates the low-temperature (
Shih-Chin Lin, Ching-Chiun Wang, Chuen-Lin Tien, Fu-Ching Tung, Hsuan-Fu Wang, Shih-Hsiang Lai   +5 more
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Surface characterization of plasma-modified low density polyethylene by attenuated total reflectance fourier-transform infrared (ATR-FTIR) spectroscopy combined with chemometrics

Polymer Testing, 2021
Atomic layer deposition (ALD) on polymer substrates often requires a modification of the polymer surface properties. Plasma-enhanced ALD (PE-ALD) process is capable of establishing improved coating/substrate adhesion and layer properties by a plasma pre ...
Réka Lilla Kovács, Máté Csontos, Szilvia Gyöngyösi, János Elek, Bence Parditka, György Deák, Ákos Kuki, Sándor Kéki, Zoltán Erdélyi   +8 more
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Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]

AIP Advances
In this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang, Yu-Min Zhang, Liang Wang, Xin-Yu Hao, Ke Xu   +4 more
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An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique

Frontiers in Mechanical Engineering, 2020
In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim, Mariana Amorim Fraga, Homero Santiago Maciel, Homero Santiago Maciel, Rodrigo Sávio Pessoa, Rodrigo Sávio Pessoa   +5 more
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Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide [PDF]

Coatings, 2021
The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit ...
Pavel Fedorov, Denis Nazarov, Oleg Medvedev, Yury Koshtyal, Aleksander Rumyantsev, Vladimir Tolmachev, Anatoly Popovich, Maxim Yu Maximov   +7 more
openaire   +1 more source