Results 41 to 50 of about 23,511 (291)

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology

Nanomaterials, 2021
With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie, Hongwu Bai, Guanghui Miao, Guobao Feng, Jing Yang, Yun He, Xiaojun Li, Yun Li   +7 more
doaj   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature [PDF]

ACS Applied Materials & Interfaces, 2019
A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the ...
Michiel Van Daele, Matthew B. E. Griffiths, Ali Raza, Matthias M. Minjauw, Eduardo Solano, Ji-Yu Feng, Ranjith K. Ramachandran, Stéphane Clemmen, Roel Baets, Seán T. Barry, Christophe Detavernier, Jolien Dendooven   +11 more
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Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals, 2020
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a ...
Alberto Perrotta, Julian Pilz, Roland Resel, Oliver Werzer, Anna Maria Coclite   +4 more
doaj   +1 more source

Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition

Journal of Materials Research and Technology, 2023
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition.
Xiao-Ying Zhang, Duan-Chen Peng, Jia-Hao Yan, Zhi-Xuan Zhang, Yu-Jiao Ruan, Juan Zuo, An Xie, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu   +12 more
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Plasma Enhanced Atomic Layer Deposition of Iridium Oxide for Application in Miniaturized Neural Implants

Current Directions in Biomedical Engineering, 2021
High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical ...
Simon Nicolai, Asplund Maria, Stieglitz Thomas, Bucher Volker   +3 more
doaj   +1 more source

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Crystals, 2023
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu, Yangfeng Li, Jiayou Tao, Ruifan Tang, Xinhe Zheng   +4 more
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Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection [PDF]

, 2011
We have employed plasma-enhanced and thermal atomic layer deposition (ALD) within the temperature range of 50–150°C for the deposition of ultra-thin (10–50 nm) Al2O3 films on 100Cr6 steel and aluminium Al2024-T3 alloys.
M. Fenker, B. Díaz, Potts, SE Stephen, Kessels, WMM Erwin, Swiatowska, J., Díaz, B., Tóth, L., Swiatowska, J, Schmalz, L, Radnóczi, G, Maurice, V., W. M. M. Kessels, Maurice, V, Seyeux, A., L. Tóth, S. E. Potts, Díaz, B, A. Seyeux, P. Marcus, Seyeux, A, V. Maurice, L. Schmalz, Tóth, L, Fenker, M, G. Radnóczi, Potts, S.E., Radnóczi, G., Marcus, P., Marcus, P, Fenker, M., Schmalz, L., Kessels, W.M.M., J. Światowska   +32 more
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Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

MATEC Web of Conferences, 2016
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
doaj   +1 more source

Plasma-enhanced atomic layer deposition of Zn-doped GaP

Journal of Physics: Conference Series, 2021
Abstract The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES).
A V Uvarov, A S Gudovskikh, A I Baranov, I A Morozov, D A Kudryashov   +4 more
openaire   +1 more source

Plasma-assisted atomic layer deposition: basics, opportunities and challenges [PDF]

, 2011
Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process.
Profijt, HB Harald, Sanden, MCM Richard van de, Potts, SE Stephen, Kessels, WMM Erwin, Kessels, WMM, H. B. Profijt, Potts, SE, Potts, S.E., W. M. M. Kessels, M. C. M. van de Sanden, S. E. Potts, Kessels, W.M. M., Van De Sanden, MCM, van de Sanden, M.C. M., Profijt, H.B., Potts, S. E., Sanden, van de, M.C.M., Profijt, H. B., Kessels, W.M.M., Profijt, HB, Kessels, W. M. M.   +20 more
core   +1 more source