Results 41 to 50 of about 5,812,653 (293)

Modelling water vapor permeability through atomic layer deposition coated photovoltaic barrier defects [PDF]

, 2014
Transparent barrier films such as Al2O3 used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules.
Robbins, David, Sweeney, Francis, Elrawemi, Mohamed, Blunt, Liam, Fleming, Leigh, Bird, David   +5 more
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature [PDF]

ACS Applied Materials & Interfaces, 2019
A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the ...
Michiel Van Daele, Matthew B. E. Griffiths, Ali Raza, Matthias M. Minjauw, Eduardo Solano, Ji-Yu Feng, Ranjith K. Ramachandran, Stéphane Clemmen, Roel Baets, Seán T. Barry, Christophe Detavernier, Jolien Dendooven   +11 more
openaire   +4 more sources

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Crystals, 2023
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu, Yangfeng Li, Jiayou Tao, Ruifan Tang, Xinhe Zheng   +4 more
doaj   +1 more source

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

MATEC Web of Conferences, 2016
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
doaj   +1 more source

Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection [PDF]

, 2011
We have employed plasma-enhanced and thermal atomic layer deposition (ALD) within the temperature range of 50–150°C for the deposition of ultra-thin (10–50 nm) Al2O3 films on 100Cr6 steel and aluminium Al2024-T3 alloys.
M. Fenker, B. Díaz, Potts, SE Stephen, Kessels, WMM Erwin, Swiatowska, J., Díaz, B., Tóth, L., Swiatowska, J, Schmalz, L, Radnóczi, G, Maurice, V., W. M. M. Kessels, Maurice, V, Seyeux, A., L. Tóth, S. E. Potts, Díaz, B, A. Seyeux, P. Marcus, Seyeux, A, V. Maurice, L. Schmalz, Tóth, L, Fenker, M, G. Radnóczi, Potts, S.E., Radnóczi, G., Marcus, P., Marcus, P, Fenker, M., Schmalz, L., Kessels, W.M.M., J. Światowska   +32 more
core   +2 more sources

A new flow chip in combination with multiphoton microscopy as a protocol for longitudinal 3D imaging of tissue calcification under shear stress

FEBS Open Bio, EarlyView.
Miniaturized flow chip platform enabling continuous perfusion and longitudinal multiphoton 3D imaging of vascular smooth muscle cell constructs under physiological flow. Brightfield imaging guides region selection, while CellTracker Green and mRuby‐labeled fetuin‐A visualize cells and mineral deposition, respectively. Magnesium supplementation markedly
Vytautas Kučikas, Aaron D. Morgan, Ignas Čiurlionis, Christian Böhm, Stefan Jockenhövel, Willi Jahnen‐Dechent, Marc A. M. J. van Zandvoort   +6 more
wiley   +1 more source

Protocol for quantifying miRNA trafficking across the endosomal membrane

FEBS Open Bio, EarlyView.
An in vitro protocol measures miRNA uptake into endosomes isolated from mammalian cell extracts, which are free of subcellular contaminants. Performed at 37 °C in the presence of ATP, it ensures the import of single‐stranded miRNA into the endosomal lumen.
Syamantak Ghosh, Kamalika Mukherjee, Suvendra N. Bhattacharyya   +2 more
wiley   +1 more source

Passivation effects of atomic-layer-deposited aluminum oxide

EPJ Photovoltaics, 2013
Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R., Delamare R., Poncelet O., Tang X., Francis L. A., Flandre D.   +5 more
doaj   +1 more source

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Advanced Materials Interfaces, 2023
Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as
Namgyu Woo, Seong‐In Cho, Sang‐Hee Ko Park   +2 more
doaj   +1 more source

Thermodynamic Pathways of Nonequilibrium Solidification in Wire‐Arc Additive Manufacturing Fe‐Based Multicomponent Alloy Structures

Advanced Engineering Materials, EarlyView.
Geometry‐driven thermal behavior in wire‐arc additive manufacturing (WAAM) influences microstructural evolution during nonequilibrium solidification of a chemically complex Fe–Cr–Nb–W–Mo–C nanocomposite system. By comparing different deposits configurations, distinct entropy–cooling rate correlations, segregation, and carbide evolution are revealed ...
Blanca Palacios, Anthony Gonzalez, Aleksander Aleman, Tyler Dolmetsch, Tanaji Paul, Arvind Agarwal   +5 more
wiley   +1 more source