Results 41 to 50 of about 96,299 (290)
Journal of Materials Research and Technology, 2023 Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition.
Xiao-Ying Zhang +12 more
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Current Directions in Biomedical Engineering, 2021 High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical ...
Simon Nicolai +3 more
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Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD
Crystals, 2023 Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu +4 more
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Plasma-enhanced atomic layer deposition of titanium vanadium nitride [PDF]
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2018 The authors have studied the plasma-enhanced atomic layer deposition of TixV1−xN using tetrakis(dimethylamido) titanium, tetrakis(dimethylamido) vanadium, and nitrogen plasma. Through modification of the ratio of TiN to VN deposition cycles, the value of x can be well controlled.
Mark J. Sowa +7 more
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Design of a Solid Freeform Fabrication Diamond Reactor [PDF]
, 1990 Solid Freeform Fabrication (SFF) has progressed from the visualization aided stage of computer aided designs (CAD) to rapid prototyping of structural parts.
Marcus, Harris L. +2 more
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Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View [PDF]
, 2019 $Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of ...
Fritz, S. +4 more
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Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors
IEEE Journal of the Electron Devices SocietyThe use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park +13 more
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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition [PDF]
, 2017 Enhancement of the properties of zinc oxide (ZnO)-based Schottky diodes has been explored using a combination of plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin films and silver oxide Schottky contacts deposited by reactive radio-frequency ...
Chalker, PR +11 more
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MATEC Web of Conferences, 2016 This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
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Passivation of Edge States in Etched InAs Sidewalls
, 2017 We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation.
Ensslin, Klaus +8 more
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