Results 41 to 50 of about 17,992 (248)

Plasma-enhanced atomic layer deposition of Zn-doped GaP

Journal of Physics: Conference Series, 2021
Abstract The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES).
A V Uvarov, A S Gudovskikh, A I Baranov, I A Morozov, D A Kudryashov   +4 more
openaire   +1 more source

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Advanced Materials Interfaces, 2023
Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as
Namgyu Woo, Seong‐In Cho, Sang‐Hee Ko Park   +2 more
doaj   +1 more source

Thermodynamic Pathways of Nonequilibrium Solidification in Wire‐Arc Additive Manufacturing Fe‐Based Multicomponent Alloy Structures

Advanced Engineering Materials, EarlyView.
Geometry‐driven thermal behavior in wire‐arc additive manufacturing (WAAM) influences microstructural evolution during nonequilibrium solidification of a chemically complex Fe–Cr–Nb–W–Mo–C nanocomposite system. By comparing different deposits configurations, distinct entropy–cooling rate correlations, segregation, and carbide evolution are revealed ...
Blanca Palacios, Anthony Gonzalez, Aleksander Aleman, Tyler Dolmetsch, Tanaji Paul, Arvind Agarwal   +5 more
wiley   +1 more source

Passivation effects of atomic-layer-deposited aluminum oxide

EPJ Photovoltaics, 2013
Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R., Delamare R., Poncelet O., Tang X., Francis L. A., Flandre D.   +5 more
doaj   +1 more source

Affecting the Properties of Copper–Graphene Electroconductive Composite by Severe Plastic Deformation

Advanced Engineering Materials, EarlyView.
Copper‐based composites enhanced with carbon feature convenient mechanical properties and favorable electric conductivity. Processing via deformation and thermomechanical treatments can introduce advantageous microstructures further enhancing their performance. Herein, copper–graphene powder‐based composites are directly consolidated via rotary swaging
Radim Kocich, Lenka Kunčická, Pavel Czernek, Zifan Wang   +3 more
wiley   +1 more source

Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

AIP Advances, 2013
We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD).
Mi-jin Jin, Junhyeon Jo, Guru P. Neupane, Jeongyong Kim, Ki-Seok An, Jung-Woo Yoo   +5 more
doaj   +1 more source

Reducing the Process Energy through Applying Plasma in Atomic Layer Deposition of Solid Oxide Fuel Cell Electrolyte [PDF]

한국정밀공학회지, 2019
The energy saving effect of reactant plasma in Atomic Layer Deposition (ALD) of ultrathin solid oxide fuel cell electrolyte was examined by measuring electrical current in real time.
Sanghoon Ji
doaj   +1 more source

Current Status and Challenges in Data Collection for Aerospace Coatings Deposited by Plasma Spraying

Advanced Engineering Materials, EarlyView.
An innovative approach has been integrated into the GRENAT project to optimize plasma spraying and coating performance. Raw materials are accelerated and melted in the plasma generated by torches, creating coatings. Monitoring sensors collect process data which are combined with ex situ characterization data.
Lila Randriamananjara, Vincent Rat, Quentin Dubreuil, Patrice Valorge, Simon Goutier, Alain Denoirjean, Olivier Messe, Céline Ruelle, Jean‐Philippe Poli   +8 more
wiley   +1 more source

Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

Advanced Materials Interfaces, 2023
HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be ...
Florian Preischel, David Zanders, Thomas Berning, Aleksander Kostka, Detlef Rogalla, Claudia Bock, Anjana Devi   +6 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source