Results 61 to 70 of about 17,992 (248)

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Nanoscale Research Letters, 2021
In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching.
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo   +10 more
doaj   +1 more source

Correlated Metal LaNiO3 as a p‐Type Transparent Conductor

Advanced Functional Materials, EarlyView.
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal, Emmeline G. Poole, Jacob Plowman, Troy D. Manning, Teresa Partida Manzanera, Kevin Sanderson, Matthew S. Dyer, Matthew J. Rosseinsky, Jonathan Alaria   +8 more
wiley   +1 more source

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

AIP Advances, 2021
Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of
Taehyeon Kim, Changyong Oh, So Hee Park, Joo Won Lee, Sang Ik Lee, Bo Sung Kim   +5 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

Advanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher, Andrea Martini, Eduardo Ortega, Lichen Bai, Eric Liberra, Daniel Escalera‐López, Hyo Sang Jeon, Antonia Herzog, Clara Rettenmaier, Dorottya Hursán, David Koshy, Mariana Cecilio de Oliveira Monteiro, Timon Wagner, Leon Jacobse, Felix Haase, Arno Bergmann, Janis Timoshenko, Beatriz Roldan Cuenya   +17 more
wiley   +1 more source

Inhibition of Anti-Reflection Film Cracks on Plastic Substrates Using Nanolaminate Layer Deposition in Plasma-Enhanced Atomic Layer Deposition

Technologies
In this research, we mainly increase the adhesion of PMMA substrate and film, which is reflected in the environmental test. This study used plasma-enhanced atomic layer deposition (PEALD) to find the relationship between the intensity of XRD reflection ...
Chi-Chieh Wang, Cheng-Fu Wang, Meng-Chi Li, Li-Chen Su, Chien-Cheng Kuo   +4 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

APL Materials, 2020
Simultaneously inducing preferred crystalline orientation with a strong piezoelectric response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a technical challenge due to the upscaling of the integration of ...
Tai Nguyen, Noureddine Adjeroud, Sebastjan Glinsek, Yves Fleming, Jérôme Guillot, Patrick Grysan, Jérôme Polesel-Maris   +6 more
doaj   +1 more source

Mechanistic Control of C─H Bond Activation and C─C Coupling in Light‐Driven Methane Conversion to C2+ Products over Multifunctional Photocatalysts

Advanced Functional Materials, EarlyView.
Methane photocatalytic activation under mild conditions remains a formidable challenge in the synthesis of solar fuels. In this review, we emphasize the growing importance of multifunctional materials and hybrid systems within a unified mechanistic framework that integrates selective C─H bond activation, formation and control of intermediates, C─C ...
Di Hu, Yuheng Jiang, Vitaly V. Ordomsky, Bastian Mei, Zhiyong Tang, Andrei Y. Khodakov   +5 more
wiley   +1 more source